Strained channel integrated circuit devices
ML Cheng, YC Lin, DW Lin - US Patent 8,729,627, 2014 - Google Patents
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Greene et al.................. 438/199 7, 190,050 B2 3/2007 King et al. 7.229, 893 B2* 6/2007 …
Greene et al.................. 438/199 7, 190,050 B2 3/2007 King et al. 7.229, 893 B2* 6/2007 …
Germanium FinFETs with metal gates and stressors
CC Yeh, CS Chang, CH Wann - US Patent 9,245,805, 2016 - Google Patents
An integrated circuit structure includes an n-type fin field effect transistor (FinFET) and a p-
type FinFET. The n-type FinFET includes a first germanium fin over a substrate; a first gate …
type FinFET. The n-type FinFET includes a first germanium fin over a substrate; a first gate …
Layout for multiple-fin SRAM cell
JJ Liaw, JJ Shen - US Patent 8,399,931, 2013 - Google Patents
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6,091,626 A 7/2000 Madan 6,181,634 B1 1/2001 Okita 6,706,571 B1 3, 2004 Yu et al …
Method for fabricating a FinFET device
HH Lin, TM Kwok, CC Su - US Patent 8,652,894, 2014 - Google Patents
US8652894B2 - Method for fabricating a FinFET device - Google Patents US8652894B2 -
Method for fabricating a FinFET device - Google Patents Method for fabricating a FinFET device …
Method for fabricating a FinFET device - Google Patents Method for fabricating a FinFET device …
Fin-like field effect transistor (FinFET) device and method of manufacturing same
TH Perng, CC Yeh, C Tzu-Chiang, CC Ho… - US Patent …, 2014 - Google Patents
A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary
FinFET device includes a semiconductor substrate; a fin structure disposed over the …
FinFET device includes a semiconductor substrate; a fin structure disposed over the …
Methods for doping fin field-effect transistors
CH Tsai, YL Huang, YU De-Wei - US Patent 9,209,280, 2015 - Google Patents
(57) ABSTRACT A method of doping a FinFET includes forming a semicon ductor fin on a
Substrate, the Substrate having a first device region and a second device region. The …
Substrate, the Substrate having a first device region and a second device region. The …
Method of fabrication of a FinFET element
JJ Xu - US Patent 8,053,299, 2011 - Google Patents
BACKGROUND The present disclosure relates generally to the field of fabrication of
semiconductor devices, and more specifically to a method of fabricating a fin type field effect …
semiconductor devices, and more specifically to a method of fabricating a fin type field effect …
Fin-like field effect transistor (FinFET) device and method of manufacturing same
CH Chang, JJ Xu - US Patent 8,367,498, 2013 - Google Patents
US PATENT DOCUMENTS 6,706,571 B1 3, 2004 Yu et al. 6,858.478 B2 2/2005 Chau et al.
7, 190,050 B2 3/2007 King et al. 7,247,887 B2 7/2007 King et al. 7,265,008 B2 9/2007 King …
7, 190,050 B2 3/2007 King et al. 7,247,887 B2 7/2007 King et al. 7,265,008 B2 9/2007 King …
FinFET and method of fabricating the same
HT Lin, CY Fu, S Huang, ST Yang, HM Chen - US Patent 8,440,517, 2013 - Google Patents
The disclosure relates to a? n? eld effect transistor (FinFET). An exemplary structure for a
FinFET comprises a substrate comprising a top surface; a? rst insulation region and a sec …
FinFET comprises a substrate comprising a top surface; a? rst insulation region and a sec …
Tri-gate devices and methods of fabrication
RS Chau, BS Doyle, J Kavalieros, D Barlage… - US Patent …, 2008 - Google Patents
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