A Gundimeda, G Kusch, M Frentrup, MJ Kappers… - …, 2024 - iopscience.iop.org
Zincblende GaN has the potential to improve the efficiency of green-and amber-emitting nitride light emitting diodes due to the absence of internal polarisation fields. However, high …
Ultra-thin solar cells display high intrinsic radiation tolerance, making them interesting for space applications. This study investigates the dependence of the open-circuit voltage …
This study explores structural changes in lattice-matched InGaAsN/GaAs/Ge films grown by MOVPE under gamma-ray irradiation. Exposure to 60Co gamma rays at doses ranging from …
T Xing, S Liu, C Song, X Wang, MA Adekoya, C Wang… - AIP Advances, 2024 - pubs.aip.org
The performance of on-orbit GaAs-based solar cells is susceptible to the displacement damage effect. The proton-induced primary displacement damage in GaAs on a …
In this work, we have experimentally investigated the impact of light trapping on the performance of InAs/GaAs quantum dot (QD) solar cells. To increase the amount of …
LR Brennaman, AJ Samin - Applied Physics A, 2023 - Springer
Developing electronic devices for space exploration requires understanding the response of the individual components to harsh environments including extreme temperatures and …
Multilayer reflectors incorporated into InGaP/GaAs/Ge triple-junctions can provide a targeted absorption boost for the middle cell, which can then be thinned to increase the cell's …
The continuing miniaturization of computing technology and the increasing popularity of CubeSats among a growing market of modest-budget developers have revolutionized the …
Ultra-thin solar cells show promise for application in space power systems for particularly harsh radiation environments, due to their high intrinsic radiation tolerance. The work …