Light management for ever-thinner photovoltaics: A tutorial review

E Camarillo Abad, HJ Joyce, LC Hirst - APL Photonics, 2024 - pubs.aip.org
Ultra-thin solar cells, an order of magnitude thinner than conventional technologies, are an
emerging device concept that enables low-cost, flexible, lightweight, and defect-tolerant …

Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well

A Gundimeda, G Kusch, M Frentrup, MJ Kappers… - …, 2024 - iopscience.iop.org
Zincblende GaN has the potential to improve the efficiency of green-and amber-emitting
nitride light emitting diodes due to the absence of internal polarisation fields. However, high …

[HTML][HTML] Open-circuit voltage degradation and trap-assisted tunneling in electron and proton-irradiated ultra-thin GaAs solar cells

A Barthel, SI Sato, L Sayre, J Li, T Nakamura… - Journal of Applied …, 2024 - pubs.aip.org
Ultra-thin solar cells display high intrinsic radiation tolerance, making them interesting for
space applications. This study investigates the dependence of the open-circuit voltage …

Gamma-ray irradiation effect on planar defect evolution of lattice-matched InGaAsN/GaAs/Ge grown by MOVPE

P Wanarattikan, A Phakkhawan, A Sakulkalavek… - Vacuum, 2024 - Elsevier
This study explores structural changes in lattice-matched InGaAsN/GaAs/Ge films grown by
MOVPE under gamma-ray irradiation. Exposure to 60Co gamma rays at doses ranging from …

[HTML][HTML] Simulation of proton-induced primary displacement damage in GaAs under different ambient temperatures

T Xing, S Liu, C Song, X Wang, MA Adekoya, C Wang… - AIP Advances, 2024 - pubs.aip.org
The performance of on-orbit GaAs-based solar cells is susceptible to the displacement
damage effect. The proton-induced primary displacement damage in GaAs on a …

External-quantum-efficiency enhancement in quantum-dot solar cells with a Fabry–Perot light-trapping structure

Y Oteki, Y Okada - Heliyon, 2023 - cell.com
In this work, we have experimentally investigated the impact of light trapping on the
performance of InAs/GaAs quantum dot (QD) solar cells. To increase the amount of …

Insights into the performance of InAs-based devices in extreme environments from multiscale simulations

LR Brennaman, AJ Samin - Applied Physics A, 2023 - Springer
Developing electronic devices for space exploration requires understanding the response of
the individual components to harsh environments including extreme temperatures and …

Optimized Bragg Reflectors for GaAs Subcell in InGaP/GaAs/Ge Triple-Junctions

J Harrison, P Pearce… - 2024 IEEE 52nd …, 2024 - ieeexplore.ieee.org
Multilayer reflectors incorporated into InGaP/GaAs/Ge triple-junctions can provide a targeted
absorption boost for the middle cell, which can then be thinned to increase the cell's …

Open-Source Radiation Testing Apparatus and Electrical Power Supply Design for CubeSat Missions

S Damkjar - 2024 - era.library.ualberta.ca
The continuing miniaturization of computing technology and the increasing popularity of
CubeSats among a growing market of modest-budget developers have revolutionized the …

Characterisation of radiation effects in ultra-thin GaAs solar cells for space applications

A Barthel - 2024 - repository.cam.ac.uk
Ultra-thin solar cells show promise for application in space power systems for particularly
harsh radiation environments, due to their high intrinsic radiation tolerance. The work …