L Wang, R Wang, G Jia, H Bai, J Hao, Y Zhang… - Vacuum, 2024 - Elsevier
In this paper, the germanium-vacancy (GeV) in diamond produced by 300 keV Ge ion implantation and subsequent annealing, were investigated by Raman spectroscopy and …
U Wahl, JG Correia, Â Costa, A Lamelas… - Materials for …, 2024 - iopscience.iop.org
In order to study the structural formation yield of germanium-vacancy (GeV) centers from implanted Ge in diamond, we have investigated its lattice location by using the β− emission …
J Xu, Y Liu, Z Guo, W Liang, S Wu, J Lin, J Nian… - Diamond and Related …, 2023 - Elsevier
This study elucidates the structure and property evolution of microcrystalline diamond (MCD) films radiated by 3.25-MeV Xe 15+ ions with an ion fluence of 4.24× 10 14 to 4.24× 10 15 …
N‐and P‐co‐ion implantation enhances the electrical conductivity of nanocrystalline diamond films to 6.9 s cm− 1 and improves the microplasma illumination (MI) characteristics …