Temperature dependence of germanium vacancy centers in high-quality diamond after 300 keV ion implantation

R Wang, L Wang, B Peng, J Fu, C Huangfu… - Journal of Applied …, 2022 - pubs.aip.org
In this work, the temperature dependence of diamond GeV centers that were formed by
germanium (Ge) ion implantation and annealed in a hydrogen atmosphere at 1000 C was …

The luminescence study of GeV centers and damage in diamond induced by 300keV Ge ion implantation

L Wang, R Wang, G Jia, H Bai, J Hao, Y Zhang… - Vacuum, 2024 - Elsevier
In this paper, the germanium-vacancy (GeV) in diamond produced by 300 keV Ge ion
implantation and subsequent annealing, were investigated by Raman spectroscopy and …

Structural formation yield of GeV centers from implanted Ge in diamond

U Wahl, JG Correia, Â Costa, A Lamelas… - Materials for …, 2024 - iopscience.iop.org
In order to study the structural formation yield of germanium-vacancy (GeV) centers from
implanted Ge in diamond, we have investigated its lattice location by using the β− emission …

Primary irradiation damages and tribological property evolutions of heavy-ion radiated microcrystalline diamond films grown by MPCVD

J Xu, Y Liu, Z Guo, W Liang, S Wu, J Lin, J Nian… - Diamond and Related …, 2023 - Elsevier
This study elucidates the structure and property evolution of microcrystalline diamond (MCD)
films radiated by 3.25-MeV Xe 15+ ions with an ion fluence of 4.24× 10 14 to 4.24× 10 15 …

Microplasma Illumination Enhancement in N+ P‐Co‐Ion‐Implanted Nanocrystalline Diamond Films

SK Sethy, KJ Sankaran, P Gupta… - … status solidi (a), 2023 - Wiley Online Library
N‐and P‐co‐ion implantation enhances the electrical conductivity of nanocrystalline
diamond films to 6.9 s cm− 1 and improves the microplasma illumination (MI) characteristics …