Understanding and evaluating the mean photon energy and the external quantum efficiency of light‐emitting diodes
The mean photon energy of a light‐emitting diode (LED) as recently defined in the IEC
standard is theoretically examined. It is pointed out that defining the mean photon energy as …
standard is theoretically examined. It is pointed out that defining the mean photon energy as …
Determining the Turn-On Voltage of GaN-Based Light-Emitting Diodes: From Near-Ultraviolet to Green Spectra
This work investigates the turn-on voltage (V on) estimation methods from experimental data
of InGaN-based multiple-quantum-well light-emitting diodes (LEDs) with emission spectra …
of InGaN-based multiple-quantum-well light-emitting diodes (LEDs) with emission spectra …
Piezoelectric field in InGaN-based quantum wells grown on c-plane sapphire substrates measured by electroreflectance spectroscopy: from near-ultraviolet to green …
The internal electric field caused by the strain-induced piezoelectric polarization in InGaN-
based single-or multiple-quantum-well light-emitting diodes (LEDs) is measured by using …
based single-or multiple-quantum-well light-emitting diodes (LEDs) is measured by using …
Effect of Defects on Strain Relaxation in InGaN/AlGaN Multiple‐Quantum‐Well Near‐Ultraviolet Light‐Emitting Diodes
Three similar‐structure InGaN/AlGaN multiple‐quantum‐well near‐ultraviolet (NUV) light‐
emitting diodes (LEDs) are utilized to investigate the microscopic effect of defects on strain …
emitting diodes (LEDs) are utilized to investigate the microscopic effect of defects on strain …
Photoreversible current in InGaN/GaN-based LED heterostructures with different numbers of QWs
AE Aslanyan, LP Avakyants, AV Chervyakov, AN Turkin… - Semiconductors, 2020 - Springer
InGaN/GaN-based LED heterostructures with different numbers of quantum wells are
investigated by photocurrent spectroscopy in the wavelength range of 350–500 nm. As a …
investigated by photocurrent spectroscopy in the wavelength range of 350–500 nm. As a …
[PDF][PDF] Determining the Turn-On Voltage of GaN-Based Light-Emitting Diodes: From Near-Ultraviolet to Green Spectra
S Maksong, T Yemor, S Yanmanee, A Kono, M Tokito… - 2023 - researchgate.net
This work investigates the turn-on voltage (Von) estimation methods from experimental data
of InGaN-based multiple-quantumwell light-emitting diodes (LEDs) with emission spectra …
of InGaN-based multiple-quantumwell light-emitting diodes (LEDs) with emission spectra …
Фотореверсивный ток в светодиодных гетероструктурах на основе InGaN/GaN c разным количеством квантовых ям
АЭ Асланян, ЛП Авакянц, АВ Червяков… - Физика и техника …, 2020 - mathnet.ru
Исследованы светодиодные гетероструктуры на основе InGaN/GaN с различным
количеством квантовых ям методом спектроскопии фототока в диапазоне длин волн …
количеством квантовых ям методом спектроскопии фототока в диапазоне длин волн …