[HTML][HTML] Resistance random access memory
Non-volatile memory (NVM) will play a decisive role in the development of the next-
generation of electronic products. Therefore, the development of next-generation NVM is …
generation of electronic products. Therefore, the development of next-generation NVM is …
Epsilon-near-zero photonics: infinite potentials
With its unique and exclusive linear and nonlinear optical characteristics, epsilon-near-zero
(ENZ) photonics has drawn a tremendous amount of attention in the recent decade in the …
(ENZ) photonics has drawn a tremendous amount of attention in the recent decade in the …
Physical and chemical mechanisms in oxide-based resistance random access memory
KC Chang, TC Chang, TM Tsai, R Zhang… - Nanoscale research …, 2015 - Springer
In this review, we provide an overview of our work in resistive switching mechanisms on
oxide-based resistance random access memory (RRAM) devices. Based on the …
oxide-based resistance random access memory (RRAM) devices. Based on the …
Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory
YT Tseng, TM Tsai, TC Chang, CC Shih… - Applied Physics …, 2015 - pubs.aip.org
In this study of resistance random access memory in a resistive switching film, the
breakdown degree was controlled by varying forming current compliance. A SiO x layer was …
breakdown degree was controlled by varying forming current compliance. A SiO x layer was …
Manipulation of epsilon-near-zero wavelength for the optimization of linear and nonlinear absorption by supercritical fluid
We introduce supercritical fluid (SCF) technology to epsilon-near-zero (ENZ) photonics for
the first time and experimentally demonstrate the manipulation of the ENZ wavelength for the …
the first time and experimentally demonstrate the manipulation of the ENZ wavelength for the …
Resistive switching mechanism of oxygen-rich indium tin oxide resistance random access memory
TM Tsai, KC Chang, TC Chang, R Zhang… - IEEE Electron …, 2016 - ieeexplore.ieee.org
This letter investigates the double-ended resistive switching characteristics of indium tin
oxide (ITO) resistance random access memory (RRAM). Resistive switching can be …
oxide (ITO) resistance random access memory (RRAM). Resistive switching can be …
Characteristics of hafnium oxide resistance random access memory with different setting compliance current
YT Su, KC Chang, TC Chang, TM Tsai, R Zhang… - Applied Physics …, 2013 - pubs.aip.org
In this Letter, the characteristics of set process of hafnium oxide based resistance random
access memory are investigated by different set processes with increasing compliance …
access memory are investigated by different set processes with increasing compliance …
High‐performance flexible organic nano‐floating gate memory devices functionalized with cobalt ferrite nanoparticles
Nano‐floating gate memory (NFGM) devices are transistor‐type memory devices that use
nanostructured materials as charge trap sites. They have recently attracted a great deal of …
nanostructured materials as charge trap sites. They have recently attracted a great deal of …
Resistance switching induced by hydrogen and oxygen in diamond-like carbon memristor
YJ Chen, KC Chang, TC Chang… - IEEE Electron …, 2014 - ieeexplore.ieee.org
In this letter, one single-layer diamond-like carbon (DLC) resistive random access memory
(RRAM) and two opposite stacking double-layer DLC/HfO 2 RRAMs were prepared to …
(RRAM) and two opposite stacking double-layer DLC/HfO 2 RRAMs were prepared to …
Hydrogen induced redox mechanism in amorphous carbon resistive random access memory
YJ Chen, HL Chen, TF Young, TC Chang… - Nanoscale research …, 2014 - Springer
We investigated the bipolar resistive switching characteristics of the resistive random access
memory (RRAM) device with amorphous carbon layer. Applying a forming voltage, the …
memory (RRAM) device with amorphous carbon layer. Applying a forming voltage, the …