[HTML][HTML] GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements
This paper critically investigates the advantages and limitations of the current-transient
methods used for the study of the deep levels in GaN-based high-electron mobility …
methods used for the study of the deep levels in GaN-based high-electron mobility …
[HTML][HTML] Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review
Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have been considered
promising candidates for power devices due to their superior advantages of high current …
promising candidates for power devices due to their superior advantages of high current …
Trapping Effects in Si -Doped -Ga2O3 MESFETs on an Fe-Doped -Ga2O3 Substrate
Threshold voltage instability was observed on β-Ga 2 O 3 transistors using double-pulsed
current-voltage and constant drain current deep level transient spectroscopy (DLTS) …
current-voltage and constant drain current deep level transient spectroscopy (DLTS) …
Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications
GaN‐based transistors are promising devices for power switching applications, but their
unique properties require careful design of the circuit in order to achieve the best …
unique properties require careful design of the circuit in order to achieve the best …
Methodology for the study of dynamic ON-resistance in high-voltage GaN field-effect transistors
D Jin, JA del Alamo - IEEE Transactions on Electron Devices, 2013 - ieeexplore.ieee.org
We have developed a new methodology to investigate the dynamic ON-resistance (R ON) of
high-voltage GaN field-effect transistors. The new technique allows the study of R ON …
high-voltage GaN field-effect transistors. The new technique allows the study of R ON …
Mechanisms responsible for dynamic ON-resistance in GaN high-voltage HEMTs
D Jin, JA del Alamo - … on Power Semiconductor Devices and ICs, 2012 - ieeexplore.ieee.org
We have developed a new methodology to study the dynamic ON-resistance (R ON) of high-
voltage GaN High-Electron-Mobility Transistors (HEMTs). With this technique, we have …
voltage GaN High-Electron-Mobility Transistors (HEMTs). With this technique, we have …
Low-frequency noise due to iron impurity centers in GaN-based HEMTs
Commercial Schottky-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) exhibit a
large peak in low-frequency (LF) noise magnitude at 325 K. An activation energy of …
large peak in low-frequency (LF) noise magnitude at 325 K. An activation energy of …
Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors
AR Arehart, A Sasikumar, S Rajan, GD Via… - Solid-State …, 2013 - Elsevier
This paper reports direct evidence for trap-related RF output power loss in GaN high
electron mobility transistors (HEMTs) grown by metal organic chemical vapor deposition …
electron mobility transistors (HEMTs) grown by metal organic chemical vapor deposition …
Reliability assessment of AlGaN/GaN HEMTs on the SiC substrate under the RF stress
This article reports a reliability study on AlGaN/GaN high-electron-mobility transistors under
the RF stress. It shows a stabilization of the gate contact after the aging test. However, the …
the RF stress. It shows a stabilization of the gate contact after the aging test. However, the …