A simulation study of gate-all-around nanowire transistor with a core-substrate
K Han, Y Zhang, Z Deng - IEEE Access, 2020 - ieeexplore.ieee.org
In this letter, a novel Core-Substrate Gate-All-Around (CSGAA) nanowire structure has been
proposed, investigated and simulated systematically based on 3D numerical simulation …
proposed, investigated and simulated systematically based on 3D numerical simulation …
BREATHE: Second-Order Gradients and Heteroscedastic Emulation based Design Space Exploration
Researchers constantly strive to explore larger and more complex search spaces in various
scientific studies and physical experiments. However, such investigations often involve …
scientific studies and physical experiments. However, such investigations often involve …
Time evolution of DIBL in gate-all-around nanowire MOSFETs during hot-carrier stress
The influence of hot-carrier degradation (HCD) on lateral trap distribution within the device
channel is experimentally investigated for gate-all-around nanowire (NW) nFETs. In …
channel is experimentally investigated for gate-all-around nanowire (NW) nFETs. In …
Performance Comparison of Circular Double Gate Transistor (CDGT) with Novel Architectures for High-Performance Applications
K Sagar, M Satish - 2022 IEEE International Symposium on …, 2022 - ieeexplore.ieee.org
In this study, a detailed analysis of an enclosed layout circular double gate transistor (CDGT)
at a gate length of 12 nm for High-Performance (HP) applications is presented. Further, we …
at a gate length of 12 nm for High-Performance (HP) applications is presented. Further, we …
Enhancing Deep Neural Networks in Diverse Resource-Constrained Hardware Settings
S Tuli - 2024 - search.proquest.com
Over the past decade, artificial intelligence (AI) has gained significant interest in industry and
academia. Deep neural network (DNN) models have exploded in size over the years. Wider …
academia. Deep neural network (DNN) models have exploded in size over the years. Wider …
An Overview of Nanowire Field-Effect Transistors for Future Nanoscale Integrated Circuits
Due to the outstanding electrostatic integrity of nanowire (NW) gate all-around (GAA) field-
effect transistors (FETs), these devices have emerged as the most promising transistor …
effect transistors (FETs), these devices have emerged as the most promising transistor …
Recovery of hot-carrier degraded nMOSFETs
MJ de Jong - 2022 - research.utwente.nl
Nowadays, computer chips are used in all kinds of industries and applications, from
communication, transport to health care, and are an important part of our daily lives. The …
communication, transport to health care, and are an important part of our daily lives. The …
[引用][C] Design and circuit performance analysis of Enclosed circular double gate mosfets
K Sagar - 2023 - shodhganga.inflibnet.ac.in
Shodhganga@INFLIBNET: Design and circuit performance analysis of Enclosed circular
double gate mosfets Skip navigation DSpace logo Home Browse Universities & …
double gate mosfets Skip navigation DSpace logo Home Browse Universities & …