Atom probe tomography 2012
TF Kelly, DJ Larson - Annual review of materials research, 2012 - annualreviews.org
In the world of tomographic imaging, atom probe tomography (APT) occupies the high-
spatial-resolution end of the spectrum. It is highly complementary to electron tomography …
spatial-resolution end of the spectrum. It is highly complementary to electron tomography …
A review on plasma-assisted VLS synthesis of silicon nanowires and radial junction solar cells
Incorporation of nanostructures is a recent trend in the photovoltaic community, aimed at
improving light absorption and consequently cell efficiency. In this regard, semiconductor …
improving light absorption and consequently cell efficiency. In this regard, semiconductor …
[图书][B] Nucleation theory and growth of nanostructures
VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
Quantitative analysis of doped/undoped ZnO nanomaterials using laser assisted atom probe tomography: Influence of the analysis parameters
In the last decade, atom probe tomography has become a powerful tool to investigate
semiconductor and insulator nanomaterials in microelectronics, spintronics, and …
semiconductor and insulator nanomaterials in microelectronics, spintronics, and …
Direct electrical probing of periodic modulation of zinc-dopant distributions in planar gallium arsenide nanowires
Selective lateral epitaxial (SLE) semiconductor nanowires (NWs), with their perfect in-plane
epitaxial alignment, ability to form lateral complex p–n junctions in situ, and compatibility …
epitaxial alignment, ability to form lateral complex p–n junctions in situ, and compatibility …
Quantitative dopant distributions in GaAs nanowires using atom probe tomography
Controllable doping of semiconductor nanowires is critical to realize their proposed
applications, however precise and reliable characterization of dopant distributions remains …
applications, however precise and reliable characterization of dopant distributions remains …
Growth of epitaxial silicon nanowires on a Si substrate by a metal-catalyst-free process
T Ishiyama, S Nakagawa, T Wakamatsu - Scientific reports, 2016 - nature.com
The growth of epitaxial Si nanowires by a metal-catalyst-free process has been investigated
as an alternative to the more common metal-catalyzed vapor–liquid–solid process. The well …
as an alternative to the more common metal-catalyzed vapor–liquid–solid process. The well …
Silicon nanowires prepared by electron beam evaporation in ultrahigh vacuum
X Xu, S Li, Y Wang, T Fan, Y Jiang, L Huang… - Nanoscale research …, 2012 - Springer
One-dimensional silicon nanowires (SiNWs) were prepared by electron beam evaporation
in ultrahigh vacuum (UHV). The SiNWs can be grown through either vapor–liquid-solid …
in ultrahigh vacuum (UHV). The SiNWs can be grown through either vapor–liquid-solid …
Atom probe tomography of nanoscale architectures in functional materials for electronic and photonic applications
Microscopy has played a central role in the advancement of nanoscience and
nanotechnology by enabling the direct visualization of nanoscale structure, leading to …
nanotechnology by enabling the direct visualization of nanoscale structure, leading to …
Atomic-scale tomography of semiconductor nanowires
Atomic-scale structure and composition is critical to understand the novel properties and to
realize the technological applications of semiconductor nanowires. This paper reviews the …
realize the technological applications of semiconductor nanowires. This paper reviews the …