A nitride semiconductor device is provided that prevents development of cracks, that has
nitride semiconductor thin films with uniform thicknesses and good growth surface flatness …

US7724793B2 - Nitride semiconductor laser element and fabrication method thereof -
Google Patents US7724793B2 - Nitride semiconductor laser element and fabrication …

In a method for producing a nitride semiconductor light emitting device according to the
present invention, first, a nitride semiconductor Substrate having groove portions formed is …

(57) ABSTRACT A nitride semiconductor light-emitting chip offers enhanced luminous
efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip …

(57) ABSTRACT A nitride semiconductor light-emitting device wherein a Sub strate or nitride
semiconductor layer has a defect concentra tion region and a low defect density region other …

(57) ABSTRACT A nitride semiconductor chip is provided that offers enhanced luminous
efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip …

This application is an application filed under 35 USC S111 (a) claiming benefit, pursuant to
35 USC S 119 (e)(1), of the filing date of the Provisional Application No. 60/720. 649 filed on …

(57) ABSTRACT A nitride semiconductor chip is provided that offers enhanced luminous
efficacy and an increased yield as a result of an improved EL emission pattern and improved …

(57) ABSTRACT A gallium and nitrogen containing laser diode device. The device has a
gallium and nitrogen containing Substrate mate rial comprising a surface region. The …

To prevent deterioration induced by wire bonding in a laser device incorporating a
semiconductor laser element having a nitride semiconductor laid on top of a nitride …