Memristors are two-terminal memory devices that can change the conductance state and
store analog values. Thanks to their simple structure, suitability for high-density integration …

In valence change memory (VCM) cells, the conductance of an insulating switching layer is
reversibly modulated by creating and redistributing point defects under an external field …

Over the past few years, extensive work on optical neural networks has been investigated in
hopes of achieving orders of magnitude improvement in energy efficiency and compute …

The predictive capability of existing physical descriptions of multi-state devices (eg, oxide
memristors, ferroelectrics, antiferroelectric, etc.) cannot be fully leveraged in circuit …

We present a unique compact model for oxide memristors based upon the concentration of
oxygen vacancies as state variables. In this model, the increase (decrease) in oxygen …

Mott memristor (MM)-based neuristors are promising candidates for artificial neuron
implementations due to their scalability, energy efficiency, and CMOS-compatibility. A …

Here we present a variation-aware design space analysis for threshold switch (TS) assisted
memristive memory. TS is augmented in series with the standard one-transistor one-resistor …

We present a framework dedicated to modeling the resistive switching operation of Valence
Change Memory (VCM) cells. The method combines an atomistic description of the device …

Energy-efficient sense amplifier (SA) circuits are essential for reliable detection of stored
memory states in emerging memory systems. In this work, we present four novel sense …

Titanium nitride and hafnium oxide stack have been widely used in various resistive memory
elements since the materials are complementary‐metal‐oxide‐semiconductor compatible …