US9972504B2 - Atomic layer etching of tungsten for enhanced tungsten deposition fill - Google
Patents US9972504B2 - Atomic layer etching of tungsten for enhanced tungsten deposition fill …

Methods of etching cobalt on substrates are provided. Some methods involve exposing the
substrate to a boron-containing halide gas and an additive, and exposing the substrate to an …

Methods of and apparatuses for processing substrates having carbon-containing material
using atomic layer deposition and selective deposition are provided. Methods involve …

Methods of etching and smoothening films by exposing to a halogen-containing plasma and
an inert plasma within a bias window in cycles are provided. Methods are suitable for …

Methods of etching metal by depositing a material reactive with a metal to be etched and a
halogen to form a volatile species and exposing the substrate to a halogen-containing gas …

BACKGROUND A MTJ memory elementis also referred to as a MTJ nanopilarandis a key
componentin magnetic recording devices, andin memory devices Such as magnetoresistive …

A method for etching a stack with an Ru containing layer disposed below a hardmask and
above a magnetic tunnel junction (MTJ) stack with pinned layer is provided. The hardmask is …

Methods of etching metal by depositing a material reactive with a metal to be etched and a
halogen to form a volatile species and exposing the substrate to a halogen-containing gas …

Methods and apparatuses for patterning carbon-containing material over a layer to be
etched are provided herein. Methods involve trimming carbon-containing material by atomic …

Methods are provided for integrating atomic layer etch and atomic layer deposition by
performing both processes in the same chamber or reactor. Methods involve sequentially …