Single-photon sources are important for integrated photonics and quantum technologies,
and can be used in quantum key distribution, quantum computing, and sensing. Color …

Silicon-based quantum emitters are candidates for large-scale qubit integration due to their
single-photon emission properties and potential for spin-photon interfaces with long spin …

The creation of fluorescent defects in silicon is a key stepping stone toward assuring the
integration perspectives of quantum photonic devices into existing technologies. Here, we …

Nb 3 Sn thin film cavities are new generation of superconducting cavities which have the
potential to replace traditional pure niobium cavities owing to their superior theoretical radio …

The G-center in silicon-on-insulator (SOI) has emerged as a relevant single photon source
due to the zero-phonon line at 1278 nm, matching the O-band of optical telecommunication …

Carbon implantation at the nanoscale is highly desired for the engineering of defect‐based
qubits in a variety of materials, including silicon, diamond, silicon carbide (SiC) and …

In this study, we inspect and analyse the effect of Al implantation into AlN by conducting
confocal microscopy on the ion implanted regions, before and after implantation, followed by …

Split-vacancy color centers in diamond are promising solid state platforms for the
implementation of photonic quantum technologies. These luminescent defects are …

In the past few decades, the use of diamond and other wide bandgap semiconductors as
quantum technology platforms has emerged as a promising field of research. One of their …

In recent decades, due to the presence of photoluminescence and electroluminescence
from various optically active point defects, silicon has demonstrated the potential to integrate …