Recent progress of high efficiency white LEDs

Y Narukawa, J Narita, T Sakamoto… - … status solidi (a), 2007 - Wiley Online Library
We fabricated three types of white light emitting diodes (LEDs). The first is the white LED,
which has a high general color rendering index (Ra) of 97 and CRI‐No. 9 of 96. The CRI …

Heat transfer—A review of 2004 literature

RJ Goldstein, WE Ibele, SV Patankar, TW Simon… - International Journal of …, 2010 - Elsevier
The present review covers the heat transfer literature published in 2004 in English
language, including some translations of foreign language papers. Though extensive, some …

Highly efficient GaN-based high-power flip-chip light-emitting diodes

S Zhou, X Liu, H Yan, Z Chen, Y Liu, S Liu - Optics express, 2019 - opg.optica.org
High-power flip-chip light-emitting diodes (FCLEDs) suffer from low efficiencies because of
poor p-type reflective ohmic contact and severe current crowding. Here, we show that it is …

White light emitting diodes with super-high luminous efficacy

Y Narukawa, M Ichikawa, D Sanga… - Journal of physics D …, 2010 - iopscience.iop.org
We fabricated three types of high luminous efficacy white light emitting diodes (LEDs). The
first was a white LED with a high luminous efficacy (η L) of 249 lm W− 1 and a high luminous …

Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes

Z Gong, S Jin, Y Chen, J McKendry… - Journal of Applied …, 2010 - pubs.aip.org
We have systematically investigated the impact of device size scaling on the light output,
spectral shift, and self-heating of 400 nm InGaN light-emitting diodes (LEDs). Devices with …

AlGaN multiple quantum well based deep UV LEDs and their applications

M Asif Khan - physica status solidi (a), 2006 - Wiley Online Library
In this paper we will describe the approaches that we have used to grow AlGaN‐based
multiple quantum well deep UV LED structures and to overcome issues of doping efficiency …

Status of growth of group III-nitride heterostructures for deep ultraviolet light-emitting diodes

K Ding, V Avrutin, Ü Özgür, H Morkoç - Crystals, 2017 - mdpi.com
We overview recent progress in growth aspects of group III-nitride heterostructures for deep
ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth …

Progress in external quantum efficiency for III‐nitride based deep ultraviolet light‐emitting diodes

C Chu, K Tian, Y Zhang, W Bi… - physica status solidi (a …, 2019 - Wiley Online Library
AlGaN‐based deep ultraviolet light‐emitting diodes (DUV LEDs) are featured with small
size, DC driving, no environmental contamination etc., and they are now emerging as the …

Optical power degradation mechanisms in AlGaN-based 280nm deep ultraviolet light-emitting diodes on sapphire

Z Gong, M Gaevski, V Adivarahan, W Sun… - Applied physics …, 2006 - pubs.aip.org
We present a study of reliability of AlGaN-based 280 nm deep ultraviolet light-emitting
diodes on sapphire substrate grown by migration-enhanced metal-organic chemical vapor …

Successful fabrication of white light emitting diodes by using extremely high external quantum efficiency blue chips

Y Narukawa, M Sano, T Sakamoto… - … status solidi (a), 2008 - Wiley Online Library
We fabricated three types of high luminous efficiency white light emitting diodes (LEDs). The
first is the white LED, which had a high luminous efficiency (ηL) of 161 lm/W with the high …