We present a measurement technique, which we call the Pulsed Time-Domain
Measurement, for characterizing hysteresis in carbon nanotube field-effect transistors, and …

Hafnium oxide thin films consist of trap states which can degrade or enhance the device
performance depending upon the application. These trap states play a crucial role in silicon …

Self-aligned metal-oxide-semiconductor (MOS) capacitors are studied with several low-
temperature, wet chemical silicon dioxide (SiO 2) interlayers to understand their impact on …

We have fabricated and electrically characterized at the wafer scale tens of metal-
ferroelectric (HfZrO)-semiconductor capacitors and metal-graphene monolayer-ferroelectric …

A new method for the distinction of discrete bulk deep levels and interface states related
peaks in deep-level transient spectroscopy spectra is proposed. The measurement of two …

In recent years, graphene (Gr) based solar cells have attracted extensive interest because of
their ability to produce low cost and highly efficient solar cells. Conventional Gr/Si Schottky …

The transient photocurrent is one of the key parameters of the spatial radiation effect of
photoelectric devices, and the energy level defect affects the transient photocurrent. In this …

Amorphous or cubic thin films were grown from tris (2, 3-dimethyl-2-butoxy) gadolinium (III),,
and precursors at. As-deposited films grown on etched (H-terminated) Si (100) exhibited …

Abstract Gamma-ray (γ-ray) irradiation effects on HfO 2-based MOS capacitors have been
studied. The capacitance-voltage (CV) characteristic was measured at room temperature …

HfO2 films were atomic layer deposited from HfCl4 and H2O on Si (100) in the temperature
range of 300–600° C. At low temperatures, films grow faster and are structurally more …