The manuscript reports that the initial strain relaxation of highly mismatched GaSb layers
grown on GaAs (001) is governed by the two-dimensional (2D), periodic interfacial misfit …

We have investigated specifically designed GaSb-based laser diodes epitaxially grown on a
Si substrate. We demonstrate continuous-wave operation of these laser diodes emitting near …

Integrated Lasers on Silicon provides a comprehensive overview of the state-of-the-art use
of lasers on silicon for photonic integration. The authors demonstrate the need for efficient …

There exists a long-term need for foreign substrates on which to grow GaSb-based
optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb …

We report structural analysis of completely relaxed GaSb epitaxial layers deposited
monolithically on GaAs substrates using interfacial misfit (IMF) array growth mode. Unlike …

The Si (001) substrates with a kind of special sub-nano streaky surface were prepared and
applied to high-quality growth of GaAs heteroepitaxial-layers. The morphology of each of …

We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN (11̅00) surface.
To this end, ScN is grown on freestanding GaN (11̅00) substrates and self-assembled GaN …

We report on the monolithic integration of GaSb and InAs fins on on-axis 300 mm Si (001) by
metal-organic chemical vapor deposition. The thickness of the GaAs/Si (001) fins used as a …

We report on the growth of near-minimum bandgap (0.1 eV) bulk InAs 0.54 Sb 0.46 on GaAs
with pronounced photoluminescence. Combining strain-mediating techniques effectively …

The integration of high carrier mobility materials into future CMOS generations is presently
being studied in order to increase drive current capability and to decrease power …