Degree of polarization of luminescence from GaAs and InP as a function of strain: a theoretical investigation

DT Cassidy, JP Landesman - Applied optics, 2020 - opg.optica.org
Experimentally, it is known that the degree of polarization (DOP) of luminescence is a
sensitive function of strain in III–V materials. It has been assumed that DOP=− K_e (e_1 …

Bonding-induced strain effects in InP DFB components soldered p-side-up on AlN substrates

GB Morrison, DT Cassidy, JE Johnson… - IEEE journal of …, 2009 - ieeexplore.ieee.org
Bonding-induced strain is shown to have significant impact on the performance of distributed
feedback (DFB) lasers mounted p-side up on AlN carriers using AuSn solder. Degree of …

Rotation of principal axes and birefringence in III-V lasers owing to bonding strain

DT Cassidy - Applied Optics, 2013 - opg.optica.org
Measurements of the degree of polarization (DOP) of photoluminescence from the facets of
bonded III-V semiconductor diode laser chips show shear strain. The effect of shear strain on …

Thermo-mechanical analysis of a laser diode chip in an opto-electronic package

SC Chaparala, LC Hughes… - International …, 2009 - asmedigitalcollection.asme.org
It is a well-known fact that the lasers have wide variety of applications in diverse fields from
medicine to communications [1]. Laser packaging involves appropriate materials selection …

[引用][C] Investigation of spectral characteristics of solitary diode lasers with integrated grating resonator

TP Nguyen - 2011 - Cuvillier Verlag

[引用][C] Estimation of Strain by Analysis of the Degree of Polarization of Luminescence

DT Cassidy - ECS Meeting Abstracts, 2006 - iopscience.iop.org
Mechanical strain affects the performance of devices. Strain directly changes the spacing of
elements, such as the pitch of the grating in a DFB or DBR structure. Strain alters the band …

[引用][C] Strain measurement

JP Landesman, DT Cassidy, JW Tomm, ML Biermann - 2007 - McGraw-Hill