A review of NBTI mechanisms and models
S Mahapatra, N Parihar - Microelectronics Reliability, 2018 - Elsevier
A comprehensive review is done of different NBTI mechanisms and models proposed in the
literature over the past years. The Reaction-Diffusion (RD) model based comprehensive …
literature over the past years. The Reaction-Diffusion (RD) model based comprehensive …
BTI analysis tool—Modeling of NBTI DC, AC stress and recovery time kinetics, nitrogen impact, and EOL estimation
A comprehensive modeling framework is presented to predict the time kinetics of negative
bias temperature instability stress and recovery during and after dc and ac stresses and also …
bias temperature instability stress and recovery during and after dc and ac stresses and also …
Recent progress in physics-based modeling of electromigration in integrated circuit interconnects
The advance of semiconductor technology not only enables integrated circuits with higher
density and better performance but also increases their vulnerability to various aging …
density and better performance but also increases their vulnerability to various aging …
A 3-D TCAD framework for NBTI—Part I: Implementation details and FinFET channel material impact
The time kinetics of interface trap generation and passivation (ΔN IT) and its contribution (ΔV
IT) during and after negative bias temperature instability (NBTI) stress is calculated by using …
IT) during and after negative bias temperature instability (NBTI) stress is calculated by using …
Modeling of NBTI using BAT framework: DC-AC stress-recovery kinetics, material, and process dependence
S Mahapatra, N Parihar - IEEE Transactions on Device and …, 2020 - ieeexplore.ieee.org
Threshold voltage shift (ΔVT) due to Negative Bias Temperature Instability (NBTI) in p-
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …
Modeling of NBTI kinetics in RMG Si and SiGe FinFETs, part-I: DC stress and recovery
An ultrafast (10-μs delay) measurement technique is used to characterize the negative bias
temperature instability-induced threshold voltage shift (ΔV T) in replacement metal gate …
temperature instability-induced threshold voltage shift (ΔV T) in replacement metal gate …
Modeling of NBTS effects in p-channel power VDMOSFETs
D Danković, N Mitrović, Z Prijić… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
This paper studies negative bias temperature instability in commercial IRF9520 p-channel
power VDMOSFETs under both static and pulsed bias stress conditions in order to model …
power VDMOSFETs under both static and pulsed bias stress conditions in order to model …
A physical model for bulk gate insulator trap generation during bias-temperature stress in differently processed p-channel FETs
T Samadder, N Choudhury, S Kumar… - … on Electron Devices, 2021 - ieeexplore.ieee.org
A deterministic reaction-diffusion–drift model is used for the time kinetics of bulk gate
insulator trap generation in p-channel Field Effect Transistors (FETs) under inversion stress …
insulator trap generation in p-channel Field Effect Transistors (FETs) under inversion stress …
A 3-D TCAD framework for NBTI, Part-II: Impact of mechanical strain, quantum effects, and FinFET dimension scaling
The TCAD framework developed in part-I of this paper is used to study the impact of fin
length (FL) and fin width (FW) scaling on interface trap generation (ΔV IT) during negative …
length (FL) and fin width (FW) scaling on interface trap generation (ΔV IT) during negative …
Modeling of DC-AC NBTI stress-recovery time kinetics in P-channel planar bulk and FDSOI MOSFETs and FinFETs
The physics-based BTI Analysis Tool (BAT) is used to model the time kinetics of threshold
voltage shift (ΔV T) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs …
voltage shift (ΔV T) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs …