Impact of graphene and single-layer BN insertion on bipolar resistive switching characteristics in tungsten oxide resistive memory
The role of the atomic interface in the resistive switching in Al–WO 3–Al devices is
investigated by inserting metallic graphene or insulating hexagonal BN sheet between the …
investigated by inserting metallic graphene or insulating hexagonal BN sheet between the …
Correlative analysis of conducting filament distribution at interfaces and bias-dependent noise sources in TiN/TiOx/Pt and Pt/TiOx/TiOy/Pt bipolar resistive switching …
JH Kim, YC Bae, AR Lee, KH Baek, JP Hong - Applied Physics Letters, 2015 - pubs.aip.org
We evaluated conducting filament distributions occurring at interfaces of TiN/TiO x/Pt and
Pt/TiO x/TiO y/Pt bipolar resistive switching elements after electroforming by identifying bias …
Pt/TiO x/TiO y/Pt bipolar resistive switching elements after electroforming by identifying bias …
Parasitic resistive switching uncovered from complementary resistive switching in single active-layer oxide memory device
L Zhu, W Hu, C Gao, Y Guo - Semiconductor Science and …, 2017 - iopscience.iop.org
This paper reports the reversible transition processes between the bipolar and
complementary resistive switching (CRS) characteristics on the binary metal-oxide resistive …
complementary resistive switching (CRS) characteristics on the binary metal-oxide resistive …
A Study of the Electrical Characteristics of WOx Material for Non-Volatile Resistive Random Access Memory
KH Jung, KM Kim, SG Song, YS Park… - Journal of the Korean …, 2016 - koreascience.kr
In this study, we observed current-voltage characteristics of the MIM (metal-insulator-metal)
structure. The $ WO_x $ material was used between metal electrodes as the oxide insulator …
structure. The $ WO_x $ material was used between metal electrodes as the oxide insulator …
[PDF][PDF] 비-휘발성저항변화메모리응용을위한WOx 물질의전기적특성연구
정균호， 김경민， 송승곤， 박윤선… - 전기전자재료학회 …, 2016 - scholar.archive.org
In this study, we observed current-voltage characteristics of the MIM (metal-insulator-metal)
structure. The WOx material was used between metal electrodes as the oxide insulator. The …
structure. The WOx material was used between metal electrodes as the oxide insulator. The …