Robust sub-100 nm T-gate fabrication process using multi-step development

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[HTML][HTML] From ghost to state-of-the-art process corrections–PEC enabled e-beam nanofabrication

U Hofmann, N Ünal, J Klikovits - Micro and Nano Engineering, 2024 - Elsevier
From ghost to state-of-the-art process corrections – PEC enabled e-beam nanofabrication -
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[PDF] techrxiv.org

HEMT With Ultralow Contact Resistance by Room Temperature Process With One-Step EBL T-Shape Gates for Subterahertz Applications: Design, Fabrication, and …

H Cheng, J Wang, J Kelly, A Ofiare… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
We present the design, fabrication, and characterization of InGaAs channel high electron
mobility transistors (HEMTs) with ultralow contact resistance for millimeter-wave and …
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[PDF] ntu.edu.tw

微縮閘極線寬之SiC 基板HEMT 的電性研究與三層光阻法開發T 型閘極

蔡駿杰 - 2023 - tdr.lib.ntu.edu.tw
氮化鎵屬於第三代半導體, 具備了寬能隙, 高電子遷移率, 高載子傳輸速度與高崩潰電場等特性,
而以氮化鋁鎵/氮化鎵為材料的高電子遷移率電晶體, 在氮化鋁鎵及氮化鎵接面處會有極化反應 …
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On-wafer Characterisation of Noise Parameters of GaN HEMTs between 77 K and 400 K

J Wang, A Ofiare, Q Li, J Kelly… - 2024 103rd ARFTG …, 2024 - ieeexplore.ieee.org
In this paper, we study the effect of temperature changes on the noise performance of GaN
high electron mobility transistors (HEMTs) covering a wide temperature range (77 K to 400 …
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Benchmarking a High Electron Mobility Transistor Using an Active Load-Pull System at 120 GHz–170 GHz

J Wang, A Ofiare, HH Cheng… - 2024 102nd ARFTG …, 2024 - ieeexplore.ieee.org
This study presents an in-depth investigation into the high-frequency capabilities of a
commercial 100 nm InP high electron mobility transistor (HEMT) through small and large …
被引用次数：1 相关文章 所有 2 个版本