The research field on tunnel-FETs (TFETs) has been rapidly developing in the last ten years,
driven by the quest for a new electronic switch operating at a supply voltage well below 1 V …

We propose a model Hamiltonian for van der Waals tunnel transistors (vdW-TFETs) relying
on few physical parameters calibrated against density functional theory (DFT) band structure …

Future Nanoelectronic devices faces substantial challenges, in particular increased power
consumption, saturation of performance, large variability and reliability limitation. In this …

We study the impact of electron–phonon interaction on the subthreshold operation region of
Tunnel-FETs by means of full-quantum simulations. Our approach is based on the …

We numerically investigate electron quantum transport in 2D van der Waals tunnel field-
effect-transistors in the presence of lateral momentum mismatch induced by lattice mismatch …

Thanks to their thinness, self-passivated surface and large variety, two-dimensional
materials have attracted much interest for their possible application in nanoelectronics. In …

Van der Waals (vdW) heterostructures are promising for building tunneling field-effect
transistors (TFETs), owing to an inherent narrow vdW gap between two stacked materials …

The successful isolation of graphene in 2004 has attracted great interest to search for
potential applications of this unique material and other newborn members of the two …

The technology of future nanoelectronic devices faces substantial challenges, in terms of
increased power consumption, saturation of performance, large variability, and reliability. In …

The successful isolation of graphene in 2004 has attracted great interest to search for
potential applications of this unique material and other newborn members of the two …