Metal–organic–vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes
InGaN quantum dot is a promising optoelectronic material, which combines the advantages
of low-dimensional and wide-gap semiconductors. The growth of InGaN quantum dots is still …
of low-dimensional and wide-gap semiconductors. The growth of InGaN quantum dots is still …
Recent progresses on InGaN quantum dot light-emitting diodes
InGaN quantum dots (QDs) have attracted many research interests in recent years for their
potentials to realize long wavelength visible emission from green to red, which can pave a …
potentials to realize long wavelength visible emission from green to red, which can pave a …
InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for
yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality …
yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality …
Improving the internal quantum efficiency of green InGaN quantum dots through coupled InGaN/GaN quantum well and quantum dot structure
The InGaN quantum dot (QD) is promising for use in green light-emitting diodes and laser
diodes owing to its small strain and weak quantum-confined Stark effect. However, its small …
diodes owing to its small strain and weak quantum-confined Stark effect. However, its small …
A GaN p—i—p—i—n Ultraviolet Avalanche Photodiode
A separated absorption and multiplication GaN p—i—p—i—n avalanche photo-diode (APD)
with a 25 μm diameter mesa is proposed and demonstrated. Compared to the conventional …
with a 25 μm diameter mesa is proposed and demonstrated. Compared to the conventional …