Passively modelocked surface-emitting semiconductor lasers

U Keller, AC Tropper - Physics Reports, 2006 - Elsevier
This paper will review and discuss pico-and femtosecond pulse generation from passively
modelocked vertical–external-cavity surface-emitting semiconductor lasers (VECSELs). We …

Extended cavity surface-emitting semiconductor lasers

AC Tropper, S Hoogland - Progress in Quantum Electronics, 2006 - Elsevier
We review progress in the development of an unconventional type of semiconductor laser
that has become the focus of much attention in recent years. The vertical-external-cavity …

Vertical-external-cavity semiconductor lasers

AC Tropper, HD Foreman, A Garnache… - Journal of Physics D …, 2004 - iopscience.iop.org
Surface-emitting semiconductor lasers can make use of external cavities and optical
pumping techniques to achieve a combination of high continuous-wave output power and …

High power CW red VECSEL with linearly polarized TEM00 output beam

JE Hastie, S Calvez, MD Dawson, T Leinonen… - Optics …, 2005 - opg.optica.org
High-power, continuous-wave operation at red wavelengths has been achieved with a
vertical external cavity surface emitting laser based on the GaInP/AlGaInP/GaAs material …

8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm

S Lutgen, T Albrecht, P Brick, W Reill, J Luft… - Applied Physics …, 2003 - pubs.aip.org
We demonstrate more than 8-W continuous-wave output power with good beam quality (M
2< 1.8) from an optically pumped semiconductor disk laser. The combination of low …

High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser

WJ Alford, TD Raymond, AA Allerman - JOSA B, 2002 - opg.optica.org
We demonstrate 1.5-W continuous-wave output power from a vertical external-cavity surface-
emitting laser (VECSEL) based on InGaAs quantum wells as the gain medium. The VECSEL …

0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm

JM Hopkins, SA Smith, CW Jeon, HD Sun… - Electronics …, 2004 - search.proquest.com
In this paper, the first high-power vertical external cavity surface emitting laser (VECSEL)
operating at 1.3 μm is reported. The CW output powers> 0.6 W were achieved using a diode …

Recent advances in VECSELs

A Rahimi-Iman - Journal of Optics, 2016 - iopscience.iop.org
Within the last two decades, vertical-external-cavity surface-emitting lasers (VECSELs) have
attracted rising interest from both industry and science. They have proven to be versatile …

0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser

JE Hastie, JM Hopkins, S Calvez… - IEEE Photonics …, 2003 - ieeexplore.ieee.org
We report the power scaling of a diode-pumped GaAs-based 850-nm vertical external-cavity
surface-emitting laser, by use of an intracavity silicon carbide (SiC) heatspreader optically …

Power scaling and thermal lensing in 825 nm emitting membrane external-cavity surface-emitting lasers

HM Phung, H Kahle, JP Penttinen, P Rajala, S Ranta… - Optics Letters, 2020 - opg.optica.org
We present a membrane external-cavity surface-emitting laser (MECSEL) operating around
825 nm at room temperature. With a tuning range of 22 nm, the MECSEL fills the spectral …