Recent advances and future prospects for memristive materials, devices, and systems
Memristive technology has been rapidly emerging as a potential alternative to traditional
CMOS technology, which is facing fundamental limitations in its development. Since oxide …
CMOS technology, which is facing fundamental limitations in its development. Since oxide …
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices
Unconventional ferroelectricity exhibited by hafnia-based thin films—robust at nanoscale
sizes—presents tremendous opportunities in nanoelectronics. However, the exact nature of …
sizes—presents tremendous opportunities in nanoelectronics. However, the exact nature of …
Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging
The resistive switching effect in memristors typically stems from the formation and rupture of
localized conductive filament paths, and HfO2 has been accepted as one of the most …
localized conductive filament paths, and HfO2 has been accepted as one of the most …
Filamentary and interface-type memristors based on tantalum oxide for energy-efficient neuromorphic hardware
To implement artificial neural networks (ANNs) based on memristor devices, it is essential to
secure the linearity and symmetry in weight update characteristics of the memristor, and …
secure the linearity and symmetry in weight update characteristics of the memristor, and …
Nanoscale resistive switching memory devices: a review
S Slesazeck, T Mikolajick - Nanotechnology, 2019 - iopscience.iop.org
In this review the different concepts of nanoscale resistive switching memory devices are
described and classified according to their I–V behaviour and the underlying physical …
described and classified according to their I–V behaviour and the underlying physical …
Overview of resistive random access memory (RRAM): Materials, filament mechanisms, performance optimization, and prospects
H Wang, X Yan - physica status solidi (RRL)–Rapid Research …, 2019 - Wiley Online Library
Because conventional nonvolatile memory is limited by process technology and physical
size, resistive random access memory (RRAM) gradually enters the field of view due to its …
size, resistive random access memory (RRAM) gradually enters the field of view due to its …
Direct Observation of Oxygen Ion Dynamics in a WO3‐x based Second‐Order Memristor with Dendritic Integration Functions
Direct observation of oxygen dynamics in an oxide‐based second‐order memristor can
provide the valid evidence to clarify the memristive mechanism, however, which is still …
provide the valid evidence to clarify the memristive mechanism, however, which is still …
Defect-stabilized substoichiometric polymorphs of hafnium oxide with semiconducting properties
Hafnium oxide plays an important role as a dielectric material in various thin-film electronic
devices such as transistors and resistive or ferroelectric memory. The crystallographic and …
devices such as transistors and resistive or ferroelectric memory. The crystallographic and …
Multi-level Cells and Quantized Conductance Characteristics of Al2O3-Based RRAM Device for Neuromorphic System
Recently, various resistance-based memory devices are being studied to replace charge-
based memory devices to satisfy high-performance memory requirements. Resistance …
based memory devices to satisfy high-performance memory requirements. Resistance …