Wide bandgap oxide semiconductors constitute a unique class of materials that combine
properties of electrical conductivity and optical transparency. They are being widely used as …

Despite being the simplest element, hydrogen (H) exhibits complex behavior in materials
due to its unique ambipolar character. In particular, it is recognized as one of the most …

High-field-effect-mobility InSnZnO thin-film transistors (TFTs) are prepared through Al-
induced microstructure regularization (AIMR) at an annealing temperature lower to 400 C …

Developing high‐efficiency and environmentally‐friendly thermoelectric materials has been
a significant challenge. Conventional thermometric materials consist of heavy (toxic) …

We propose a model to describe the fluctuations in the internal magnetic field due to ion
dynamics observed in muon spin relaxation (μ SR) by an Edwards–Anderson-type …

An experimental study is conducted in which the subgap trap density of states (DoS) is
measured by ultrabroadband photoconduction (UBPC) to examine hydrogen incorporation …

This paper provides a novel technique to explore hydrogen trapping in aluminum alloys by
combining muon spin relaxation and first-principles calculations. Zero-field muon spin …

Hydrogen at the mass ppm level causes hydrogen embrittlement in metallic materials, but
experimentally elucidating the hydrogen trapping sites is extremely difficult. We exploit the …

Muon spin rotation has long been recognized as one of the few methods for experimentally
accessing the electronic state of dilute hydrogen (H) in semiconductors and dielectrics …

Abstract In–Ga–Zn–O (IGZO) films were deposited by sputtering in Ar+ O 2+ H 2 and Ar+ H 2
O atmosphere to investigate the effects of H 2 and H 2 O introduction on physical and …