Recent advances in colorimetric and fluorescent chemosensors based on thiourea derivatives for metallic cations: A review

M Muhammad, S Khan, SA Shehzadi, Z Gul… - Dyes and …, 2022 - Elsevier
Thiourea and its derivatives display several electronic and structural features which enable
its application in various fields, ranging from biological to non-biological. These compounds …

A systematic review of hybrid superconducting magnetic/battery energy storage systems: Applications, control strategies, benefits, limitations and future prospects

PG Papageorgiou, KO Oureilidis… - … and Sustainable Energy …, 2023 - Elsevier
Employment of properly controlled energy storage technologies can improve power systems'
resilience and cost-effective operation. However, none of the existing storage types can …

New figure-of-merit combining semiconductor and multi-level converter properties

JA Anderson, G Zulauf, JW Kolar… - IEEE Open Journal of …, 2020 - ieeexplore.ieee.org
Figures-of-Merit (FOMs) are widely-used to compare power semiconductor materials and
devices and to motivate research and development of new technology nodes. These …

Fabrication of UV photodetector based on GaN/Psi heterojunction using pulse laser deposition method: Effect of different laser wavelengths

MA Fakhri, MJ AbdulRazzaq, HD Jabbar, ET Salim… - Optical Materials, 2023 - Elsevier
In this study, GaN/pSi heterojunction photodetectors were fabricated via pulsed laser
deposition method (PLD). Photoelectrochemical etching method (PECE) with laser aid …

Recent progress of heterostructures based on two dimensional materials and wide bandgap semiconductors

Y Liu, Y Fang, D Yang, X Pi… - Journal of Physics …, 2022 - iopscience.iop.org
Recent progress in the synthesis and assembly of two-dimensional (2D) materials has laid
the foundation for various applications of atomically thin layer films. These 2D materials …

[PDF][PDF] Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi.

HD Jabbar, MA Fakhri, MJ Abdul Razzaq… - Journal of …, 2023 - cdn.techscience.cn
Gallium nitride (GaN)/porous silicon (PSi) film was prepared using a pulsed laser deposition
method and 1064 nm Nd: YAG laser for optoelectronic applications and a series of Psi …

New FOM-based performance evaluation of 600/650 V SiC and GaN semiconductors for next-generation EV drives

D Cittanti, E Vico, IR Bojoi - IEEE Access, 2022 - ieeexplore.ieee.org
The drive inverter represents a central component of an electric vehicle (EV) drive train,
being responsible for the DC/AC power conversion between the battery and the electrical …

A comprehensive review of gan-based bi-directional on-board charger topologies and modulation methods

O Bay, MT Tran, M El Baghdadi, S Chakraborty… - Energies, 2023 - mdpi.com
The wide-scale adoption and accelerated growth of electric vehicle (EV) use and increasing
demand for faster charging necessitate the research and development of power electronic …

Fault diagnosis of PMSG stator inter-turn fault using extended Kalman filter and unscented Kalman filter

W El Sayed, M Abd El Geliel, A Lotfy - Energies, 2020 - mdpi.com
Since the permeant magnet synchronous generator (PMSG) has many applications in
particular safety-critical applications, enhancing PMSG availability has become essential. An …

Cradle-to-Gate Life Cycle Assessment (LCA) of GaN Power Semiconductor Device

L Vauche, G Guillemaud, JC Lopes Barbosa… - Sustainability, 2024 - mdpi.com
Wide Band Gap (WBG) semiconductors have the potential to provide significant
improvements in energy efficiency over conventional silicon (Si) semiconductors. While the …