Incessant downscaling of feature size of multi-gate devices such as FinFETs and gate-all-
around (GAA) nanowire (NW)-FETs leads to unadorned effects like short channel effects …

Abstract Tunnel Field Effect Transistors (TFETs) have emerged as serious contenders for the
replacement of traditional MOSFET technology for the future ultra low power Analog/Digital …

Flexible ultraviolet (UV) photodetectors have attracted extensive research interest due to
their potential applications in personal UV monitoring, UV electronic eye, anti-UV gloves …

The GaAs-based material system is well-known for hosting InAs quantum dots (QDs) with
outstanding optical properties, typically emitting at a wavelength of around 900 nm. The …

Neuromorphic Computing (NC) is considered as the next generation of artificial intelligence
(AI). AI can transform the way people live and work, however, the current Neumann …

InAs quantum dots grown on relaxed, metamorphic InGaAs buffers are an important
heterostructure for the realization of devices based on GaAs substrates. In these last 20 …

This work presents a novel, cost-effective method for synthesizing AlxGa1− xAs
nanowhiskers on a GaAs surface by electrochemical deposition. The process begins with …

Abstract A 100 periods In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As multiple quantum wells (MQWs)
with and without 2 ML InAs insertion layers (ISLs) were grown on semi-insulating GaAs …

With the development of microelectronic technology, the integration of electronic systems is
increasing continuously. Electronic systems are becoming more and more sensitive to …

Exploring the possibility of nanostructures to modulate thermal conductivity (TC) contributes
to promote a deeper comprehension of phonon diffusion and transport processes with the …