Vertical gallium nitride (GaN) power devices have attracted increased attention due to their
superior high-voltage and high-current capacity as well as easier thermal management than …

Processing at the atomic scale is becoming increasingly critical for state-of-the-art electronic
devices for computing and data storage, but also for emerging technologies such as related …

Low-temperature atomic layer deposition (ALD) offers significant merits in terms of
processing uniform, conformal and pinhole-free thin films, with sub-nanometer thickness …

Atomic layer deposition (ALD) is well known as the most advanced coating technique so far
due to its unique deposition characteristics, such as uniformity and 3D conformality. ALD is …

This article discusses key elementary surface-reaction processes in state-of-the-art plasma
etching and deposition relevant to nanoelectronic device fabrication and presents a concise …

Metal-organic frameworks (MOFs) have attracted great attention and become one of the
most intensively studied topics due to their high surface area, large porosity, tunable pore …

The formation and propagation of anti‐phase boundaries (APBs) in the epitaxial growth of III‐
V semiconductors on Silicon is still the subject of great debate, despite the impressive …

The orientation uncertainty of single-crystal turbine blades is a neglected practical
engineering problem, and previous research has paid little attention to it. The work …

HfO2 was deposited at 80–250° C by plasma-enhanced atomic layer deposition (PEALD),
and properties were compared with those obtained by using thermal atomic layer deposition …

Heteroepitaxy of indium phosphide (InP) and its lattice-matched alloys on silicon (Si) show
great promise for Si-based optoelectronic devices and photonic integrated circuits. Here, we …