Disorder effects in nitride semiconductors: impact on fundamental and device properties
Semiconductor structures used for fundamental or device applications most often
incorporate alloy materials. In “usual” or “common” III–V alloys, based on the InGaAsP or …
incorporate alloy materials. In “usual” or “common” III–V alloys, based on the InGaAsP or …
X-ray diffraction analysis of cubic zincblende III-nitrides
M Frentrup, LY Lee, SL Sahonta… - Journal of Physics D …, 2017 - iopscience.iop.org
Solving the green gap problem is a key challenge for the development of future LED-based
light systems. A promising approach to achieve higher LED efficiencies in the green spectral …
light systems. A promising approach to achieve higher LED efficiencies in the green spectral …
Polar (,)/ Quantum Wells: Revisiting the Impact of Carrier Localization on the “Green Gap” Problem
We present a detailed theoretical analysis of the electronic and optical properties of c-plane
In Ga N/Ga N quantum-well structures with In contents ranging from 5% to 25%. Special …
In Ga N/Ga N quantum-well structures with In contents ranging from 5% to 25%. Special …
[HTML][HTML] Impact of random alloy fluctuations on the electronic and optical properties of (Al, Ga) N quantum wells: Insights from tight-binding calculations
R Finn, S Schulz - The Journal of Chemical Physics, 2022 - pubs.aip.org
Light emitters based on the semiconductor alloy aluminum gallium nitride [(Al, Ga) N] have
gained significant attention in recent years due to their potential for a wide range of …
gained significant attention in recent years due to their potential for a wide range of …
Atomistic analysis of Auger recombination in -plane (In,Ga)N/GaN quantum wells: Temperature-dependent competition between radiative and nonradiative …
JM McMahon, E Kioupakis, S Schulz - Physical Review B, 2022 - APS
We present an atomistic theoretical study of the temperature dependence of the competition
between Auger and radiative recombination in c-plane (In, Ga) N/GaN quantum wells with …
between Auger and radiative recombination in c-plane (In, Ga) N/GaN quantum wells with …
Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence
Time-resolved cathodoluminescence offers new possibilities for the study of semiconductor
nanostructures–including defects. The versatile combination of time, spatial, and spectral …
nanostructures–including defects. The versatile combination of time, spatial, and spectral …
Diffusion Enhancement in Highly Excited MAPbI3 Perovskite Layers with Additives
Carrier mobility is one of the crucial parameters determining the electronic device
performance. We apply the light-induced transient grating technique to measure …
performance. We apply the light-induced transient grating technique to measure …
Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials
Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …
Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures
We study the photoluminescence internal quantum efficiency (IQE) and recombination
dynamics in a pair of polar and non-polar InGaN/GaN quantum well (QW) light-emitting …
dynamics in a pair of polar and non-polar InGaN/GaN quantum well (QW) light-emitting …
Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in -plane InGaN/GaN quantum wells
We study the carrier-density-dependent recombination dynamics in m-plane InGaN/GaN
multiple quantum wells in the presence of n-type background doping by time-resolved …
multiple quantum wells in the presence of n-type background doping by time-resolved …