A Ka-Band Colpitts–Clapp VCO With 30% Tuning Range and High Output Power
This letter presents a systematic design strategy for SiGe bipolar voltage-controlled
oscillators (VCOs) with a wide tuning range (TR). As a proof of concept, a Colpitts–Clapp …
oscillators (VCOs) with a wide tuning range (TR). As a proof of concept, a Colpitts–Clapp …
33–43 GHz and 66–86 GHz VCO With High Output Power in an 80 GHz SiGe HBT Technology
G Liu, A Trasser, H Schumacher - IEEE microwave and …, 2010 - ieeexplore.ieee.org
This letter presents a signal generation circuit that combines a wide tuning range voltage
controlled oscillator (VCO) and a frequency doubler. The VCO provides two differential …
controlled oscillator (VCO) and a frequency doubler. The VCO provides two differential …
64 to 86 GHz VCO utilizing push-push frequency doubling in a 80 GHz fT SiGe HBT technology
In this paper, the authors present a VCO/doubler IC with an output frequency near the
maximum frequency of oscillation of the technology used. The IC operates from 64 GHz to …
maximum frequency of oscillation of the technology used. The IC operates from 64 GHz to …
A PLL with ultra low phase noise for millimeter wave applications
X Gai, G Liu, S Chartier, A Trasser… - The 40th European …, 2010 - ieeexplore.ieee.org
An ultra low noise phase locked loop (PLL) for millimeter wave applications is presented.
The complete design includes a mixer type phase detector, a divide-by-32 frequency divider …
The complete design includes a mixer type phase detector, a divide-by-32 frequency divider …
A low-power K-band Colpitts VCO with 30% tuning range in a 130 nm SiGe BiCMOS technology
FI Jamal, J Wessel, D Kissinger - 2018 IEEE 18th Topical …, 2018 - ieeexplore.ieee.org
This paper presents the design of an wideband voltage controlled oscillator (VCO) in K-band
frequencies fabricated in a 0.13 pm SiGe BiCMOS process. The core of the VCO is built …
frequencies fabricated in a 0.13 pm SiGe BiCMOS process. The core of the VCO is built …
Dual-band millimeter-wave VCO with embedded RF-MEMS switch module in BiCMOS technology
This paper presents a dual-band millimeter-wave VCO utilizing RF-MEMS switches fully
integrated into a standard BiCMOS process. The switch and associated transmission line …
integrated into a standard BiCMOS process. The switch and associated transmission line …
60–80 GHz frequency doubler operating close to fmax
A push-push frequency doubler, capable of delivering acceptable power to feed active
mixers at frequencies close to fmax, is presented. Fabricated in an 80 GHz f T/f max SiGe …
mixers at frequencies close to fmax, is presented. Fabricated in an 80 GHz f T/f max SiGe …
A fully integrated low phase noise, fast locking, 31 to 34.9 GHz dual-loop PLL
X Gai, A Trasser, H Schumacher - 2011 6th European …, 2011 - ieeexplore.ieee.org
A fully integrated dual loop PLL with ultra-low phase noise and fast lock time is presented.
The topology combines a frequency acquisition and a phase-locked hold loop. The phase …
The topology combines a frequency acquisition and a phase-locked hold loop. The phase …
U-and V-band signal sources in Si/SiGe technology
Y Su, G Liu, A Trasser… - 2011 Semiconductor …, 2011 - ieeexplore.ieee.org
A U-band VCO and a V-band push-push frequency doubler are designed in a 0.25 µm SiGe:
C BiCMOS technology. The VCO oscillates from 48GHz to 55 GHz, with an output power of …
C BiCMOS technology. The VCO oscillates from 48GHz to 55 GHz, with an output power of …
Dual-band millimeter-wave VCO with embedded RF-MEMS switch module in BiCMOS technology
This paper presents a dual-band millimeter-wave VCO utilizing RF-MEMS switches fully
integrated into a standard BiCMOS process. The switch and associated transmission line …
integrated into a standard BiCMOS process. The switch and associated transmission line …