The antimony-based chalcogenide Sb 2 Se 3 is a rapidly emerging material for photonic
phase change applications owing to its ultra-low optical losses at telecommunication …

Phase‐change memory (PCM) has been developed for three‐dimensional (3D) data
storage devices, posing huge challenges to the thermal stability and reliability of PCM …

Phase-change memory (PCM) technology has recently attracted a vivid interest for
neuromorphic applications, in-memory computing, and photonic integration due to the …

High-speed electrical switching of Ge 2 Sb 2 Te 5 (GST) remains a challenging task due to
the large impedance mismatch between the low-conductivity amorphous state and the high …

The latest progresses in software engineering such as cloud computing, big data analysis,
and machine learning have accelerated the emergence of advanced intelligent systems …

Аннотация В последние 30 лет наблюдается стремительный рост исследований
материалов фазовой памяти на основе халькогенидных полупроводников—от …

The foundations of band theory of semiconductors were laid in 1931 in publications of A.
Wilson. 1, 2 The design of semiconductor devices on the basis of this theory predetermined …

We present the enhanced properties observed in the phase change memory alloy
Ge2Sb2Te5 (GST) when doped with arsenic. Although arsenic is known as a toxic element …

We investigated the deposition and the phase-change properties of In-doped GeTe thin films
obtained by plasma enhanced metalorganic chemical vapor deposition and doped with …

To overcome the reliability issue of phase-change memory, the development of stable phase-
change materials is extremely important. In this study, we analyze 13 dopants for Ge 2 Sb 2 …