A perspective on terahertz next-generation wireless communications
In the past year, fifth-generation (5G) wireless technology has seen dramatic growth, spurred
on by the continuing demand for faster data communications with lower latency. At the same …
on by the continuing demand for faster data communications with lower latency. At the same …
Enabling Applications of Electromagnetic Waves at 0.3–1.0 THz Using Silicon Electronic Integrated Circuits
W Choi, KK O - ACS photonics, 2024 - ACS Publications
Over the past 15 years, the output power of silicon submillimeter-wave electronics has
increased by a factor greater than 1000 reaching− 3.9 dBm at 440 GHz for a single unit in …
increased by a factor greater than 1000 reaching− 3.9 dBm at 440 GHz for a single unit in …
Design of a D-band CMOS amplifier utilizing coupled slow-wave coplanar waveguides
This paper validates a design and modeling methodology of coupled slow-wave
waveguides (CS-CPW) by presenting a D-band CMOS low-noise amplifier (LNA) that …
waveguides (CS-CPW) by presenting a D-band CMOS low-noise amplifier (LNA) that …
Ic and array technologies for 100-300ghz wireless
100–300 GHz wireless systems can provide very high data rates per signal beam, and,
given the short wavelengths, even compact arrays can contain many elements, and hence …
given the short wavelengths, even compact arrays can contain many elements, and hence …
3.2-mW ultra-low-power 173–207-GHz amplifier with 130-nm SiGe HBTs operating in saturation
This article presents an ultra-low-power silicon germanium heterojunction bipolar transistor
(SiGe HBT) amplifier operating at 200 GHz. The amplifier consists of three cascaded gain …
(SiGe HBT) amplifier operating at 200 GHz. The amplifier consists of three cascaded gain …
100-300GHz Wireless: ICs, Arrays, and Systems
100–300GHz wireless systems can provide very high data rates per signal beam, and, given
the short wavelengths, even compact arrays can contain many elements, and hence can …
the short wavelengths, even compact arrays can contain many elements, and hence can …
A 230-GHz SiGe amplifier with 21.8-dB gain and 3-dBm output power for sub-THz receivers
H Li, J Chen, D Hou, Z Li, P Zhou… - IEEE Microwave and …, 2021 - ieeexplore.ieee.org
This letter presents a 230-GHz high-gain amplifier implemented in a 0.13-μm SiGe BiCMOS
technology. The amplifier consists of a single-ended cascode (CC) stage for noise …
technology. The amplifier consists of a single-ended cascode (CC) stage for noise …
On-chip-antennas: Next Milestone in the Big World of small satellites—a survey of Potentials, Challenges, and future directions
R Karim, P Malcovati - IEEE Aerospace and Electronic Systems …, 2021 - ieeexplore.ieee.org
Small satellites have revolutionized the space industry because of their variety of benefits
over large satellites. Antennas are one of the key components of the small satellites, whose …
over large satellites. Antennas are one of the key components of the small satellites, whose …
CMOS terahertz receivers
Recent advances of devices and circuits have made CMOS (Complementary Metal Oxide
Semiconductor) integrated circuits technology an alternative for realizing capable and …
Semiconductor) integrated circuits technology an alternative for realizing capable and …
A 24.7 dB low noise amplifier with variable gain and tunable matching in 130 nm SiGe at 200 GHz
This work presents a low noise amplifier with variable gain, large bandwidth and a tunable
output matching network fabricated in a 130 nm SiGe BiCMOS technology. The circuit is …
output matching network fabricated in a 130 nm SiGe BiCMOS technology. The circuit is …