The GeTiO 2 amorphous films were deposited by magnetron sputtering and subsequently
annealed at 400, 550, 600 and 700° C for nanostructuring. The structure of annealed films …

This paper reports on the effects of the Halo structure variations on threshold voltage (V th)
in a 22 nm gate length high-k/metal gate planar NMOS transistor. Since the V th is one of the …

The electrical and structural properties of hafnium oxide (HfO 2) received by ultra violet (UV)-
stimulated plasma anodizing were investigated. The plasma anodizing process is carried …

The study of high dielectric materials has received great attention lately as a key passive
component for the application of metal-insulator-metal (MIM) capacitors. In this paper, 50 nm …

In this article, Taguchi orthogonal array method was used to optimize the process
parameters during the design of a 22 nm n-type Metal Oxide Semiconductor Field Effect …

This study will describe a nondestructive method to determine compositional depth profiles
of thicker films using Variable Kinetic Energy X-ray Photoelectron Spectroscopy (VKE-XPS) …

The electronic states of individual clusters formed from Ti deposition on a TiO 2 (1 1 0)-1× 1
surface were measured using scanning tunneling spectroscopy (STS). The results of …

As discussed in chapter 2, numerous thin-film based single and multilayer coatings have
been developed for broadband and omnidirectional transmission applications but they suffer …

Robust optimization using Taguchi's orthogonal arrays is becoming a necessity as a means
to optimize device parameter designs prior to the actual fabrication in an effort to reduce …