We present an overview of negative bias temperature instability (NBTI) commonly observed
in p-channel metal–oxide–semiconductor field-effect transistors when stressed with negative …

We present a brief overview of negative bias temperature instability (NBTI) commonly
observed for in p-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) …

Individual atoms and ions are now routinely manipulated using scanning tunnelling
microscopes or electromagnetic traps for the creation and control of artificial quantum states …

This invaluable resource tells the complete story of failure mechanisms—from basic
concepts to the tools necessary to conduct reliability tests and analyze the results. Both a …

Injection-dependent minority carrier lifetime measurements are a valuable characterisation
method for semiconductor materials, particularly those for photovoltaic applications. For a …

The amorphous SiO2/Si interface is arguably the most important part in semiconductor
technology, strongly influencing the device reliability. Its electronic structure is affected by …

Spin qubits in silicon quantum dots can have long coherence times, yet their manipulation
relies on the exchange interaction, through which charge noise can induce decoherence …

We propose a model for magnetic noise based on spin flips (not electron trapping) of
paramagnetic dangling bonds at the amorphous-semiconductor/oxide interface. A wide …

This paper examines the atomic-scale defects involved in a metal-oxide-silicon field-effect-
transistor reliability problem called the negative-bias temperature instability (NBTI). NBTI has …

Semiconductor qubit devices suffer from the drift of important device parameters as they are
operated. The most important example is a shift in qubit operating frequencies. This effect …