BACKGROUND The present disclosure relates generally to memristive devices, and to methods of making and using the same. Nanometer-scale crossed-wire Switching devices …
AM Bratkovski, V Osipov - US Patent 8,050,078, 2011 - Google Patents
Embodiments of the present invention are directed to memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device includes a first …
W Wu, Q Xia, PJ Kuekes, RS Williams - US Patent 8,270,200, 2012 - Google Patents
A nanoscale three-terminal switching device has a bottom electrode, a top electrode, and a side electrode, each of which may be a nanowire. The top electrode extends at an angle …
JW Mares, SM Weiss - US Patent 9,231,209, 2016 - Google Patents
Various embodiments of a composite material are provided. In one embodiment of the present invention a nanometer scale composite material comprises, by Volume, from about …
K Suzuki, K Yamamoto - US Patent 10,424,731, 2019 - Google Patents
According to one embodiment, a memory device includes a first electrode; a variable resistance layer provided on the first electrode, the variable resistance layer including a …
P Kirsch, T Qiong, A Ruhl, M Tornow… - US Patent 10,741,778, 2020 - Google Patents
An electronic component (10) comprising a plurality of switching elements (1) which comprise, in this sequence, a first electrode (16), a molecular layer (18) bonded to a …
(57) ABSTRACT A configurable memristive device (300) for regulating an electrical signal includes a memristive matrix (350) contain ing a first dopant species; emitter (320), collector …
W Jackson, G Gibson - US Patent 9,747,976, 2017 - Google Patents
(57) ABSTRACT A charge trapping memristor is disclosed. An example charge trapping memristor includes a first electrode and second electrode configured on opposite sides of a …
(57) ABSTRACT A passivation layer is deposited on a first portion of a region of the solar cell. A grid line is deposited on a second portion of the region. The passivation layer is …