Low bandgap semiconducting polymers for polymeric photovoltaics

C Liu, K Wang, X Gong, AJ Heeger - Chemical Society Reviews, 2016 - pubs.rsc.org
In order to develop high performance polymer solar cells (PSCs), full exploitation of the sun-
irradiation from ultraviolet (UV) to near infrared (NIR) is one of the key factors to ensure high …

Will silicon be the photonic material of the third millenium?

L Pavesi - Journal of Physics: Condensed Matter, 2003 - iopscience.iop.org
Silicon microphotonics, a technology which merges photonics and silicon microelectronic
components, is rapidly evolving. Many different fields of application are emerging …

Photovoltage field-effect transistors

V Adinolfi, EH Sargent - Nature, 2017 - nature.com
The detection of infrared radiation enables night vision, health monitoring, optical
communications and three-dimensional object recognition. Silicon is widely used in modern …

[图书][B] Light emitting silicon for microphotonics

S Ossicini, L Pavesi, F Priolo - 2003 - books.google.com
Light Emitting Silicon for Microphotonics offers fascinating insight the state-of-the-art in
silicon microphotonics and what we can expect in the near future. The book presents an …

Reduced pressure–chemical vapor deposition of Ge thick layers on Si (001) for 1.3–1.55-μm photodetection

JM Hartmann, A Abbadie, AM Papon… - Journal of Applied …, 2004 - pubs.aip.org
With the increasing use of optical fibers in telecommunications, the demand for efficient
photodetectors operating in the low loss windows 1.3–1.6 m of silica fibers is growing …

Monolithically integrated Si gate-controlled light-emitting device: science and properties

K Xu - Journal of optics, 2018 - iopscience.iop.org
The motivation of this study is to develop ap–n junction based light emitting device, in which
the light emission is conventionally realized using reverse current driving, by voltage driving …

Silicon: Quantum dot photovoltage triodes

W Zhou, L Zheng, Z Ning, X Cheng, F Wang… - Nature …, 2021 - nature.com
Silicon is widespread in modern electronics, but its electronic bandgap prevents the
detection of infrared radiation at wavelengths above 1,100 nanometers, which limits its …

[图书][B] Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy

JD Cressler, S Monfray, G Freeman, D Friedman… - 2018 - taylorfrancis.com
An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

High performance germanium-on-silicon detectors for optical communications

S Fama, L Colace, G Masini, G Assanto… - Applied Physics …, 2002 - pubs.aip.org
We demonstrate fast and efficient germanium-on-silicon pin photodetectors for optical
communications, with responsivities as high as 0.89 and 0.75 A/W at 1.3 and 1.55 μm …

A review on the recent progress of silicon‐on‐insulator‐based photodetectors

J Liu, S Cristoloveanu, J Wan - physica status solidi (a), 2021 - Wiley Online Library
The family of photodetectors plays an important role in multiple applications. Extensive
research and continuous development of photodetectors has enriched their functionalities …