A comparative analysis of cavity positions in charge plasma based tunnel FET for biosensor application

A Kumar, S Kale - IETE Journal of Research, 2024 - Taylor & Francis
This work reports a comparative analysis of different cavity positions in Charge Plasma-
based Tunnel Field Effect Transistor (CP TFET) for Biosensor Application. In CP TFET, we …

Analysis of III-V material-based dual source T-channel junction-less TFET with metal implant for improved DC and RF performance

A Anam, SI Amin, D Prasad, N Kumar, S Anand - Micro and Nanostructures, 2023 - Elsevier
In this paper, two III-V material-based junctionless tunnel FET devices, D-1 and D-2, are
proposed. The proposed device D-1 has a low bandgap (GaSb-based) dual source and a …

[HTML][HTML] Nano-biosensors with subthreshold swing tunnel field effect transistor: A cutting-edge review

MP Sundari, GL Priya - Sensing and Bio-Sensing Research, 2024 - Elsevier
A thorough investigation into the development and performance assessment of biosensors
that utilize Tunnel Field Effect Transistors (TFETs), showcasing a departure from …

A novel recessed-source negative capacitance gate-all-around tunneling field effect transistor for low-power applications

W Wei, W Lü, Y Han, C Zhang, D Chen - Microelectronics Journal, 2024 - Elsevier
A recessed-source (RS) negative capacitance (NC) gate-all-around (GAA) tunneling field
effect transistor (RS-NCGAATFET) was proposed to achieve low power consumption and …

InN TFET with extended gate for high sensitivity label‐free biosensor

X Ren, H Zhao, S Guan, L Geng… - International Journal of …, 2024 - Wiley Online Library
An extended gate tunneling field effect transistor (EG‐TFET) with narrow bandgap material
InN as a label‐free dielectric modulated biosensor is proposed and investigated. An …

Sensitivity analysis of Horizontal pocket N-TFET based biosensor considering repulsive steric effects

S Tiwari, R Saha - Materials Science and Engineering: B, 2023 - Elsevier
In this paper, sensitivity analysis of Tunnel Field Effect Transistor (TFET) based label free
Biosensor has been countered considering the repulsive steric effect (RSE). Horizontal …

Investigation of hetero gate oxide hetero stacked triple metal vertical tunnel FET with variable interface trap charges and temperature

S Bharali, B Choudhuri, B Bhowmick - Microelectronics Journal, 2024 - Elsevier
The performance of the hetero gate oxide hetero stacked triple metal vertical tunnel FET
(HGO-HS-TMG V-TFET) in both dc and analog/RF is examined in this work. GaSb (a low …

Threshold voltage model development of N+ pocket vertical junctionless TFET (V-JL-TFET) as a label free biosensor

P Raut, DK Panda - Microelectronics Journal, 2024 - Elsevier
This work investigates into the potential application of an improved N+ pocket Vertical
Junctionless TFET (V-JL-TFET) as a label free biosensor. To calculate the sensitivity of the …

A Symmetric L-Shaped Source Vertical TFET with a GeSi/Si Heterojunction for a High-Sensitivity Label-Free Biosensor

X Ren, H Zhao - Journal of Electronic Materials, 2024 - Springer
Tunneling field-effect transistor (TFET) biosensors have been widely studied because of
their simple operation, low off-state current, and high sensitivity. This paper reports a novel …

Trap Sensitivity of splitted source Z shape horizontal pocket and hetero stack TFETs: a simulation study

S Tiwari, R Saha - Physica Scripta, 2023 - iopscience.iop.org
This paper reports the trap sensitivity analysis of split source horizontal pocket Z shape
tunnel field effect transistor (ZHP-TFET) and hetero stack TFET (HS-TFET) using technology …