[图书][B] Solid-state spectroscopy: an introduction

H Kuzmany - 2009 - books.google.com
Spectroscopic methods have opened up a new horizon in our knowledge of solid-state
materials. Numerous techniques using electromagnetic radiation or charged and neutral …

Evidence for defect-mediated tunneling in hexagonal boron nitride-based junctions

U Chandni, K Watanabe, T Taniguchi… - Nano letters, 2015 - ACS Publications
We investigate electron tunneling through atomically thin layers of hexagonal boron nitride
(hBN). Metal (Cr/Au) and semimetal (graphite) counter-electrodes are employed. While the …

Signatures of phonon and defect-assisted tunneling in planar metal–hexagonal boron nitride–graphene junctions

U Chandni, K Watanabe, T Taniguchi… - Nano letters, 2016 - ACS Publications
Electron tunneling spectroscopy measurements on van der Waals heterostructures
consisting of metal and graphene (or graphite) electrodes separated by atomically thin …

Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors

AW Dey, J Svensson, M Ek, E Lind, C Thelander… - Nano …, 2013 - ACS Publications
The ever-growing demand on high-performance electronics has generated transistors with
very impressive figures of merit (Radosavljevic et al., IEEE Int. Devices Meeting 2009, 1–4 …

High-resolution spectroscopy of two-dimensional electron systems

OE Dial, RC Ashoori, LN Pfeiffer, KW West - Nature, 2007 - nature.com
Spectroscopic methods involving the sudden injection or ejection of electrons in materials
are a powerful probe of electronic structure and interactions. These techniques, such as …

[HTML][HTML] Tunneling-based graphene electronics: Methods and examples

VL Katkov, VA Osipov - Journal of Vacuum Science & Technology B, 2017 - pubs.aip.org
The authors present an overview of the main theoretical approaches used to describe tunnel
processes in graphene nanoelectronics. Two currently central theoretical methods of …

[HTML][HTML] Transport in a two-channel nanotransistor device with lateral resonant tunneling

U Wulf, AT Preda, GA Nemnes - Micromachines, 2024 - mdpi.com
We study field effect nanotransistor devices in the Si/SiO2 material system which are based
on lateral resonant tunneling between two parallel conduction channels. After introducing a …

Tunneling and nonlinear transport in a vertically coupled GaAs∕ AlGaAs double quantum wire system

E Bielejec, JA Seamons, JL Reno, MP Lilly - Applied Physics Letters, 2005 - pubs.aip.org
We report low-dimensional tunneling in an independently contacted vertically coupled
quantum wire system. This nanostructure is fabricated in a high quality GaAs∕ AlGaAs …

Nanowire to single-electron transistor transition in trigate SOI MOSFETs

ND Akhavan, A Afzalian, CW Lee, R Yan… - IEEE transactions on …, 2010 - ieeexplore.ieee.org
We investigate the effect of symmetrical geometrical constrictions on the electrical
characteristics of ultrathin silicon-on-insulator nanowires with a trigate structure using a 3-D …

Electrical control of ferromagnetism and bias anomaly in mn-doped semiconductor heterostructures

C Ertler, W Pötz - Physical Review B—Condensed Matter and Materials …, 2011 - APS
The interplay of tunneling transport and carrier-mediated ferromagnetism in narrow
semiconductor multiquantum well structures containing layers of GaMnAs is investigated …