Prospects for wide bandgap and ultrawide bandgap CMOS devices
Power and RF electronics applications have spurred massive investment into a range of
wide and ultrawide bandgap semiconductor devices which can switch large currents and …
wide and ultrawide bandgap semiconductor devices which can switch large currents and …
High breakdown voltage in RF AlN/GaN/AlN quantum well HEMTs
In evaluating GaN high-electron mobility transistors (HEMTs) for high-power applications, it
is crucial to consider the device-level breakdown characteristics. This letter replaces the …
is crucial to consider the device-level breakdown characteristics. This letter replaces the …
Photo-tunable terahertz absorber based on intercalated few-layer graphene
M Masyukov, AN Grebenchukov, EA Litvinov… - Journal of …, 2020 - iopscience.iop.org
In this paper, we show the ability of usage intercalated few-layer graphene for the
development of an optically tunable absorbing metasurface. The geometrical parameters of …
development of an optically tunable absorbing metasurface. The geometrical parameters of …
High conductivity coherently strained quantum well XHEMT heterostructures on AlN substrates with delta doping
Polarization-induced two-dimensional electron gases (2DEGs) in AlN/GaN/AlN quantum
well high-electron-mobility transistors on ultrawide bandgap AlN substrates offer a promising …
well high-electron-mobility transistors on ultrawide bandgap AlN substrates offer a promising …
Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures
Unintentionally doped (UID) AlGaN/GaN-based multichannel high electron mobility
transistor (MC-HEMT) heterostructures have been demonstrated on the SiC substrate using …
transistor (MC-HEMT) heterostructures have been demonstrated on the SiC substrate using …
Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double‐Heterojunction High‐Electron‐Mobility Transistor by Epilayer Stress Engineering
Herein, 2D electron gas (2DEG) enhancement in an AlN/GaN/AlN double‐heterojunction
high‐electron‐mobility transistor (DH‐HEMT) is achieved by epilayer stress engineering …
high‐electron‐mobility transistor (DH‐HEMT) is achieved by epilayer stress engineering …
Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates
To enhance the electron mobility in quantum-well high-electron-mobility transistors (QW
HEMTs), we investigate the transport properties in AlN/GaN/AlN heterostructures on Al-polar …
HEMTs), we investigate the transport properties in AlN/GaN/AlN heterostructures on Al-polar …
Terahertz characterization of two-dimensional low-conductive layers enabled by metal gratings
While terahertz spectroscopy can provide valuable information regarding the charge
transport properties in semiconductors, its application for the characterization of low …
transport properties in semiconductors, its application for the characterization of low …
Origin of the two-dimensional hole gas and criteria for its existence in the III-nitride heterostructures
R Lingaparthi, N Dharmarasu… - Applied Physics …, 2023 - pubs.aip.org
The existence of the two-dimensional electron gas (2DEG) and two-dimensional hole gas
(2DHG) in the same III-nitride heterostructure is advantageous for the development of …
(2DHG) in the same III-nitride heterostructure is advantageous for the development of …
[图书][B] GaN-on-AlN as a platform for high-voltage complementary electronics
SJ Bader - 2020 - search.proquest.com
The prospect of defining complementary logic monolithically in a wide-bandgap
semiconductor such as Gallium Nitride, to manage the RF and power applications of an an …
semiconductor such as Gallium Nitride, to manage the RF and power applications of an an …