[PDF][PDF] Analysis and Characterization of Normally-Off Gallium Nitride High Electron Mobility Transistors.
S Anwar, SM Gulfam, B Muhammad… - … Materials & Continua, 2021 - cdn.techscience.cn
High electron mobility transistor (HEMT) based on gallium nitride (GaN) is one of the most
promising candidates for the future generation of high frequencies and high-power …
promising candidates for the future generation of high frequencies and high-power …
Investigation of a hybrid approach for normally-off GaN HEMTs using fluorine treatment and recess etch techniques
G Kurt, ME Gulseren, G Salkim, S Ural… - IEEE Journal of the …, 2019 - ieeexplore.ieee.org
A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs)
combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The …
combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The …
Degradation mode analysis of different bonding technologies of sic power semiconductors stressed by active power cycling
R Sankari, U Kessler, M Rittner… - PCIM Europe 2024; …, 2024 - ieeexplore.ieee.org
SiC is being used as a new generation of power semiconductor to meet the increasing
demands of modern electrified automotive powertrains. The standard AIT technology is Al …
demands of modern electrified automotive powertrains. The standard AIT technology is Al …
Fabrication of High Performance High Electron Mobility Transistor Design Based on III-V Compound Semiconductor
HM Tun, MS Nwe - Proceedings of the 11th International Conference on …, 2022 - Springer
The constraint for high power and high frequency involves semiconductor materials with a
wide bandgap, which has many higher breakdown voltages because the crucial breakdown …
wide bandgap, which has many higher breakdown voltages because the crucial breakdown …
Evolution of GaN Based HEMTs Towards Achieving Enhancement Mode Operation
A Chakrabarty, R Swain - Modeling of AlGaN/GaN High Electron Mobility …, 2024 - Springer
In power electronic circuits, enhancement mode (E-mode) devices play a vital role while
realizing fail-safe operation. Presence of in-built two-dimensional electron gas (2DEG), near …
realizing fail-safe operation. Presence of in-built two-dimensional electron gas (2DEG), near …
TCAD simulation of AlGaN/GaN HEMT grown on high-resistivity silicon substrate
This paper studies GaN device structure on silicon substrates. The fabricated device, with
LG of 4-µm and WG of 100-µm, demonstrates a maximum drain current of 780mA/mm and a …
LG of 4-µm and WG of 100-µm, demonstrates a maximum drain current of 780mA/mm and a …
Towards Achieving Enhancement Mode Operation
A Chakrabarty, R Swain - Modeling of AlGaN/GaN High Electron … - books.google.com
In power electronic circuits, enhancement mode (E-mode) devices play a vital role while
realizing fail-safe operation. Presence of in-built two-dimensional electron gas (2DEG), near …
realizing fail-safe operation. Presence of in-built two-dimensional electron gas (2DEG), near …
Characteristics Improvement of AlGaN/GaN MOS-HEMT by Thickness and Doping Concentration Variation of GaN Doped Layer
N Karmokar, F Khan, S Subrina - 2019 IEEE International WIE …, 2019 - ieeexplore.ieee.org
This paper presents a method to precisely control the device characteristics, ie the threshold
voltage and the transconductance of AlGaN/GaN metal oxide semiconductor high electron …
voltage and the transconductance of AlGaN/GaN metal oxide semiconductor high electron …
[HTML][HTML] A Novel High Performance of GaN-Based HEMT with Two Channel Layers of GaN/InAlGaN
R Karami, M Sabaghi, M Masoumi - World Journal of Engineering and …, 2017 - scirp.org
The potential impact of GaN-based high electron mobility transistor (HEMT) with two channel
layers of GaN/InAlGaN is reported. Using two-dimensional and two-carrier device …
layers of GaN/InAlGaN is reported. Using two-dimensional and two-carrier device …