This is a continuation-in-part of US. patent application Ser. No. 08/558,521,? led Nov. 16,
1995, Which is a continuation of US. patent application Ser. No. 08/188,032,? led Jan. 28 …

E. 6. E. Ebel A CMOS imager having an improved signal to noise ratio 5.47, 515 11 f1995
Fossum et al. and improved dynamic range is disclosed. The CMOS 5506.429 4/1996 …

The invention relates to an electronic exposure control System for a Solid State image
Sensor, in particular for active pixel MOS image sensor (CMOS), and a method for using the …

The invention also relates to an apparatus and method for selectively providing a silicide
coating over the transistor gates of a CMOS imager to improve the speed of the transistor …

(57) ABSTRACT A retrograde well structure for a CMOS imager that improves the quantum
efficiency and Signal-to-noise ratio of the imager. The retrograde well comprises a doped …

348/308, 321, 367,269, 362, 298 57 ABSTRACT 56) References Cited Designs and
operational methods to increase the dynamic range of image Sensors and APS devices in …

5,323,052 6/1994 Koyama.................................. 257/294 57 ABSTRACT 5,324,958 6/1994
Mead et al.............................. 257/291 5,461,425 10/1995 Fowler et al.. A CMOS imaging …

An imaging device formed as a CMOS Semiconductor integrated circuit includes a buried
contact line between the floating diffusion region and the gate of a Source follower output …

(57) ABSTRACT A method of forming a multiple-trench photosensor for use in a CMOS
imager having an improved charge capacity. The multi-trench photosensor may be either a …

5,471.515 A 11/1995 Fossum et al. formed adjacent to it which has a Second conductive
layer 5,506.429 A 4/1996 Tanaka et al. that extends at least partially over the Surface of the …