GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …

Vertical gallium nitride (GaN) power devices have attracted increased attention due to their
superior high-voltage and high-current capacity as well as easier thermal management than …

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …

This letter reports a GaN vertical fin power field-effect-transistor structure with submicron fin-
shaped channels on bulk GaN substrates. In this vertical transistor design only n-GaN layers …

Gallium nitride (GaN) is becoming a mainstream semiconductor for power and radio-
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …

Dislocations that cause a reverse leakage current in vertical pn diodes on a GaN free-
standing substrate were investigated. Under a high reverse bias, dot-like leakage spots …

This letter presents the first experimental study on capacitances, charges, and power-
switching figure of merits (FOM) for a large-area vertical GaN power transistor. A 1.2-kV, 5-A …

This letter demonstrates vertical GaN junction barrier Schottky (JBS) rectifiers fabricated with
novel ion implantation techniques. We used two different methods to form the lateral pn grids …

Silicon-based power devices are reaching their fundamental performance limit. The use of
wide-bandgap semiconductors with superior material properties over silicon offers the …

FinFET is the backbone device technology for CMOS electronics at deeply scaled
technology nodes per Moore's law. Recently, the FinFET concept has been leveraged to …