Revival of ferroelectric memories based on emerging fluorite‐structured ferroelectrics
Over the last few decades, the research on ferroelectric memories has been limited due to
their dimensional scalability and incompatibility with complementary metal‐oxide …
their dimensional scalability and incompatibility with complementary metal‐oxide …
HfO2-based ferroelectrics: From enhancing performance, material design, to applications
Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …
storage, and low energy consumption to fulfill the rapid developments of big data, the …
Neuromorphic devices based on fluorite‐structured ferroelectrics
A continuous exponential rise has been observed in the storage and processing of the data
that may not curtail in the foreseeable future. The required data processing speed and …
that may not curtail in the foreseeable future. The required data processing speed and …
Physics, Structures, and Applications of Fluorite‐Structured Ferroelectric Tunnel Junctions
The interest in ferroelectric tunnel junctions (FTJ) has been revitalized by the discovery of
ferroelectricity in fluorite‐structured oxides such as HfO2 and ZrO2. In terms of thickness …
ferroelectricity in fluorite‐structured oxides such as HfO2 and ZrO2. In terms of thickness …
Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High …
We present herewith a novel approach of equally thick AFE/FE (ZrO2/HZO) bilayer stack
heterostructure films for achieving an equivalent oxide thickness (EOT) of 4.1 Å with a …
heterostructure films for achieving an equivalent oxide thickness (EOT) of 4.1 Å with a …
Unveiled Ferroelectricity in Well‐Known Non‐Ferroelectric Materials and Their Semiconductor Applications
Ferroelectric materials are considered ideal for emerging memory devices owing to their
characteristic remanent polarization, which can be switched by applying a sufficient electric …
characteristic remanent polarization, which can be switched by applying a sufficient electric …
Ferroelectricity in CMOS-compatible hafnium oxides: Reviving the ferroelectric field-effect transistor technology
A Ferroelectric Field-Effect Transistor (FEFET) is a promising candidate for next-generation
memory devices because it offers numerous advantages, such as its high speed, low energy …
memory devices because it offers numerous advantages, such as its high speed, low energy …
Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/HfxZr1-xO2/Interlayer/Si (MFIS) Gate Structure
F Tian, S Zhao, H Xu, J Xiang, T Li… - … on Electron Devices, 2021 - ieeexplore.ieee.org
We study the impact of different interlayers (ILs) and ferroelectric materials on charge
trapping during the endurance fatigue of Si ferroelectric field effect transistor (FeFET) with …
trapping during the endurance fatigue of Si ferroelectric field effect transistor (FeFET) with …
The Opportunity of Negative Capacitance Behavior in Flash Memory for High‐Density and Energy‐Efficient In‐Memory Computing Applications
Flash memory is a promising candidate for use in in‐memory computing (IMC) owing to its
multistate operations, high on/off ratio, non‐volatility, and the maturity of device …
multistate operations, high on/off ratio, non‐volatility, and the maturity of device …
Composition dependence of ferroelectric properties in (111)-oriented epitaxial HfO2-CeO2 solid solution films
K Hirai, T Shiraishi, W Yamaoka… - Japanese Journal of …, 2022 - iopscience.iop.org
The composition dependence of ferroelectric properties was investigated for (111)-oriented
epitaxial HfO 2-CeO 2 solid solution films. Twenty nanometer thick films with different …
epitaxial HfO 2-CeO 2 solid solution films. Twenty nanometer thick films with different …