A review on thermophotovoltaic cell and its applications in energy conversion: issues and recommendations
Generally, waste heat is redundantly released into the surrounding by anthropogenic
activities without strategized planning. Consequently, urban heat islands and global …
activities without strategized planning. Consequently, urban heat islands and global …
Investigation of InGaAs thermophotovoltaic cells under blackbody radiation
M Tan, L Ji, Y Wu, P Dai, Q Wang, K Li… - Applied Physics …, 2014 - iopscience.iop.org
The efficiency calibration of InGaAs thermophotovoltaic (TPV) cells with band gap energies
of 0.6 and 0.74 eV under blackbody radiation is performed on the basis of the combination of …
of 0.6 and 0.74 eV under blackbody radiation is performed on the basis of the combination of …
Characterization of surface defects on Be-implanted GaSb
Characteristics of ion implantation induced damage in GaSb, and its removal by rapid
thermal annealing, are investigated by cross-sectional transmission electron microscopy …
thermal annealing, are investigated by cross-sectional transmission electron microscopy …
Development of thin film metamorphic GaSb cells by epitaxial lift-off from GaAs substrates
EJ Renteria, A Mansoori, SJ Addamane… - 2016 IEEE 43rd …, 2016 - ieeexplore.ieee.org
A flexible, lightweight GaSb solar cell has been attempted. The thin-film cell was bonded to a
flexible carrier and isolated from the GaAs substrate by using epitaxial lift-off technique. The …
flexible carrier and isolated from the GaAs substrate by using epitaxial lift-off technique. The …
Epitaxial and non-epitaxial large area GaSb-based thermophotovoltaic (TPV) cells
InGaAsSb and GaSb thermophotovoltaic cells were grown lattice-matched to GaSb
substrates epitaxially by the Molecular Beam Epitaxy (MBE) method and fabricated non …
substrates epitaxially by the Molecular Beam Epitaxy (MBE) method and fabricated non …
GaSb thermophotovoltaics: current challenges and solutions
GaSb thermophotovoltaic cells fabricated using Molecular Beam Epitaxy (MBE) and ion
implantation techniques are studied. Challenges including different defect formation …
implantation techniques are studied. Challenges including different defect formation …
Thin-film gallium antimonide for room-temperature radiation detection
EI Vaughan, N Rahimi, G Balakrishnan… - Journal of Electronic …, 2015 - Springer
Thin-film GaSb diodes were fabricated and investigated for room-temperature radiation
detection. GaSb PN junction-based detectors were fabricated by use of both ion …
detection. GaSb PN junction-based detectors were fabricated by use of both ion …
[图书][B] Thin film AlSb carrier transport properties and room temperature radiation response
EI Vaughan - 2016 - search.proquest.com
Theoretical predictions for AlSb material properties have not been realized using bulk
growth methods. This research was motivated by advances in molecular beam epitaxial …
growth methods. This research was motivated by advances in molecular beam epitaxial …
[图书][B] Advanced Power Generation Systems: Thermal Sources
YT Shah - 2022 - taylorfrancis.com
Advanced Power Generation Systems: Thermal Sources evaluates advances made in heat-
to-power technologies for conventional combustion heat and nuclear heat, along with …
to-power technologies for conventional combustion heat and nuclear heat, along with …
Interfacial characterization and electrical properties of Ni–GaSb contacts
KL Lin, SH Chen - Applied Physics Letters, 2014 - pubs.aip.org
The microstructural characterization of Ni–GaSb junctions in samples annealed at 300 C,
350 C, and 400 C in a N 2 atmosphere was elucidated using transmission electron …
350 C, and 400 C in a N 2 atmosphere was elucidated using transmission electron …