Direct-bridge growth of aligned GaN nanowires (NWs) over the trench of GaN-coated
sapphire substrate was realized in which the issues of parasitic deposition and resultant …

Engineering nonlinear optical responses at the microscale is a key topic in photonics for
achieving efficient frequency conversion and light manipulation. Gallium nitride (GaN) is a …

Simultaneous growth of different kinds of aligned GaN nanostructures (ie, nanowires,
needles, pyramids and micro-rods) on a single substrate was firstly realized at a low …

Abstract Spontaneous GaN/AlN core–shell nanowires with high crystal quality were
synthesized on sapphire substrates by vapor–liquid–solid hydride vapor phase epitaxy (VLS …

GaN columns are grown by (1 1 1) GaAs nitridation at 1000° C. GaAs wafers are used as a
substrate and Ga source. The nitridation is performed using a hydrogen and ammonia flow …

Нитевидные микрокристаллические светодиодные структуры InGaN/GaN в
коаксиальной геометрии длиной 400–600 мкм были выращены методом газофазной …

In this work non-scanning far-field nonlinear optical microscopy is employed to study the
whispering gallery modes in tapered GaN microwire resonators. We demonstrate the …

The results of structural studies of GaN nanowires containing screw dislocations are
presented. It is found that the length of the Burgers vector of dislocations may reach 5 nm, ie …

Abstract Microcrystalline wire-like InGaN/GaN light-emitting diodes designed as core–shell
structures 400–600 μm in length are grown by metal–organic vapor-phase epitaxy on …

Gallium nitride (GaN) has become an important semiconductor for the optoelectronics and
power electronics fields in the pursuit of high efficiency devices. However, the lack of a …