Electrical properties of Ag/p-Cu2NiSnS4 thin film Schottky diode
PR Ghediya, YM Palan, DP Bhangadiya… - Materials Today …, 2021 - Elsevier
In this paper, we report the electrical properties of ITO/p-Cu 2 NiSnS 4/Ag thin film Schottky
diode fabricated by direct-ink-coating techniques. The Cu 2 NiSnS 4 (CNTS) films were dip …
diode fabricated by direct-ink-coating techniques. The Cu 2 NiSnS 4 (CNTS) films were dip …
Solution-based processing of Ge2Sb2Se4Te optical phase change materials
D Wiedeman, R Sharma, E Bissell… - Optical Materials …, 2024 - opg.optica.org
Phase change materials (PCMs) are important building blocks in solid-state memory and
photonic devices. Solution-based processing promises large-area, cost-effective, conformal …
photonic devices. Solution-based processing promises large-area, cost-effective, conformal …
Deposition of Cu2SnS3 Thin Films on Mo Coated Substrates by Fine Channel Mist CVD Method
T Tomono, H Yoshihisa, K Okamura… - Journal of Ternary and …, 2021 - jstage.jst.go.jp
To prevent exfoliation of Cu-Sn precursor, which deposited by fine channel mist CVD, from
Mo coated substrate, annealed Mo coated substrate in N2 atmosphere was used. The …
Mo coated substrate, annealed Mo coated substrate in N2 atmosphere was used. The …
二源系ファインチャネルミストCVD 法で作製したCu2SnS3 薄膜の組成比均一化
岡村和哉， 友野巧也， 齋藤蓮… - … 系化合物・太陽電池研究会 …, 2022 - jstage.jst.go.jp
抄録 In our previous study, Cu-Sn precursor deposited by mist CVD was peeling due to
volume expansion during sulfurization to obtain CTS. Therefore in this study, to deposit CTS …
volume expansion during sulfurization to obtain CTS. Therefore in this study, to deposit CTS …