Found in many terahertz (THz) and submillimeter-wave systems, GaAs Schottky diodes
continue to be one of the most useful THz devices. As a low-parasitic device that operates …

We report on the design, fabrication, and testing of a new generation of all-solid-state
frequency-multiplied terahertz sources providing up to ten times more output power at room …

A review is presented of the state of the art of electronic sources based on semiconductor
devices that have either demonstrated substantial amounts of output power or have a strong …

New and emerging terahertz technology applications make this a very exciting time for the
scientists, engineers, and technologists in the field. New sensors and detectors have been …

This article presents some aspects of the technology of terahertz heterodyne receiver front-
ends dedicated to astrophysics, planetary and atmospheric sciences. It focuses on …

We report on the design, fabrication, and characterization of an 840-900-GHz frequency
multiplier chain that delivers more than 1 mW across the band at room temperature with a …

A GaN Schottky barrier diode (SBD) on SiC for frequency doubler applications was
fabricated with a N-/N+ GaN stack of 200 nm/1500 nm in thickness and 5× 10 17 cm-3/8× 10 …

Planar Schottky diode frequency multipliers are by far the most employed devices for local
oscillator (LO) power generation at terahertz frequencies. In order to push up to the limit the …

This work represents the first demonstration of in-phase power-combined frequency
multipliers above 100 GHz based on a dual-chip single-waveguide topology, which consists …

In this paper, the development of two high power 220 GHz frequency triplers is proposed.
The GaAs Schottky diodes with six nodes are applied to realize high efficiency 220 GHz …