The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …

Global data traffic is growing rapidly, and the demand for optoelectronic transceivers applied
in data centers (DCs) is also increasing correspondingly. In this review, we first briefly …

With recent developments in high‐speed and high‐power electronics and Si‐based
photonic integration, the concept of monolithic III–V/Si integration through epitaxial methods …

Heteroepitaxy of III–V compound semiconductors on industry standard (001) silicon (Si)
substrates is highly desirable for large-scale electronic and photonic integrated circuits …

To achieve on-chip lasers for Si-photonics, monolithic integration using selective epitaxy is a
favorable option due to the unique defect engineering and resultant bufferless structure …

Heteroepitaxy of indium phosphide (InP) and its lattice-matched alloys on silicon (Si) show
great promise for Si-based optoelectronic devices and photonic integrated circuits. Here, we …

Monolithic integration of III–V materials and devices on CMOS compatible on‐axis Si (001)
substrates enables a route of low‐cost and high‐density Si‐based photonic integrated …

We study the impact of improved heat removal on the performance of InGaAs/GaAs
microdisk lasers epi-side down bonded onto a silicon substrate. Unlike the initial …

In recent years, GaSb-on-Si direct heteroepitaxy has been highly desirable to extend the
operating wavelength range into mid-infrared and high-mobility applications, such as free …

Here, we study the morphology and dislocation dynamics of metalorganic vapor phase
epitaxy (MOVPE)-grown GaP on a V-groove Si substrate. We show that Si from the substrate …