Near-ideal top-gate controllability of InGaZnO thin-film transistors by suppressing interface defects with an ultrathin atomic layer deposited gate insulator
An ultrathin atomic-layer-deposited (ALD) AlO x gate insulator (GI) was implemented for self-
aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). Although …
aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). Although …
Hybrid polymer/metal oxide thin films for high performance, flexible transistors
Metal oxides (MOs) have garnered significant attention in a variety of research fields,
particularly in flexible electronics such as wearable devices, due to their superior electronic …
particularly in flexible electronics such as wearable devices, due to their superior electronic …
Monolithic integration of high-voltage thin-film electronics on low-voltage integrated circuits using a solution process
Y Son, B Frost, Y Zhao, RL Peterson - Nature Electronics, 2019 - nature.com
The performance of silicon complementary metal–oxide–semiconductor integrated circuits
can be enhanced through the monolithic three-dimensional integration of additional device …
can be enhanced through the monolithic three-dimensional integration of additional device …
Significant performance and stability improvement of low-voltage InZnO thin-film transistors by slight La doping
Low-voltage, solution-processed oxide thin-film transistors (TFTs) have shown great
potential in next-generation low-power, printable electronics. However, it is now still quite …
potential in next-generation low-power, printable electronics. However, it is now still quite …
Solution processed In2O3/IGO heterojunction thin film transistors with high carrier concentration
Nowadays, high-quality metal oxide thin film transistors grown by solution process have the
most potential to replace the traditional a-Si TFT as the next generation of transparent …
most potential to replace the traditional a-Si TFT as the next generation of transparent …
High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs With 4 nm-Thick Atomic-Layer-Deposited AlOx Insulator
Electrical characteristics of self-aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-
film transistors (TFTs) with 4 nm-thick atomic-layer-deposited (ALD) AlO x gate insulator (GI) …
film transistors (TFTs) with 4 nm-thick atomic-layer-deposited (ALD) AlO x gate insulator (GI) …
Low-voltage, solution-processed InZnO thin-film transistors with enhanced performance achieved by bilayer gate dielectrics
Fully solution-processed oxide thin-film transistors (TFTs) have shown a great potential in
future printable electronics. However, high defect densities at the dielectric/channel interface …
future printable electronics. However, high defect densities at the dielectric/channel interface …
Self-Aligned Top-Gate Amorphous InGaZnO TFTs With Plasma Enhanced Chemical Vapor Deposited Sub-10 nm SiO2 Gate Dielectric for Low-Voltage Applications
Y Zhang, H Yang, H Peng, Y Cao… - IEEE Electron Device …, 2019 - ieeexplore.ieee.org
In this letter, self-aligned top-gate (SATG) amorphous In-Ga-Zn-O (a-IGZO) thin-film
transistors (TFTs) with an 8.62-nm SiO 2 gate dielectric grown by conventional plasma …
transistors (TFTs) with an 8.62-nm SiO 2 gate dielectric grown by conventional plasma …
Enhanced UV–visible detection of InGaZnO phototransistors via CsPbBr3 quantum dots
Indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) exhibit high field-effect carrier
mobility and low off-state current, which are attractive for high speed and low noise …
mobility and low off-state current, which are attractive for high speed and low noise …
High-performance ZnO thin-film transistors on flexible PET substrates with a maximum process temperature of 100° C
J Dong, Q Li, Z Yi, D Han, Y Wang… - IEEE Journal of the …, 2020 - ieeexplore.ieee.org
In the present work, we testify a strategy to achieve high-performance ZnO thin film
transistors (TFTs) on a flexible PET substrate at a maximum process temperature no more …
transistors (TFTs) on a flexible PET substrate at a maximum process temperature no more …