Indium nitride (InN) is a low-band-gap semiconductor with unusually high electron mobility,
making it suitable for IR-range optoelectronics and high-frequency transistors. However, the …

Anisotropic plasma-enhanced atomic layer etching (ALE) requires directional ions with a
well-defined ion energy to remove materials in a highly selective and self-limiting fashion. In …

Sophisticated thin film growth techniques increasingly rely on the addition of a plasma
component to open or widen a processing window, particularly at low temperatures. Taking …

Plasma-enhanced atomic layer deposition (PEALD) enables the epitaxial growth of ultrathin
indium nitride (InN) films at significantly reduced process temperatures and with greater …

The surface topological evolution during the growth of indium nitride (InN) by plasma-
assisted atomic layer epitaxy (ALEp) on gallium nitride (GaN)(0001) substrates was studied …

In situ and in vacuo surface studies of in situ and ex situ GaN substrate preparation were
conducted to advance fundamental understanding of GaN surface preparation for low …

Two-dimensional materials, especially transaction metal dichalcogenides, have shown a
wide variety of applications and variability of desirable electronic characteristics. Various …