Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage,
higher thermal conductivity, higher operating frequency, higher operating temperature, and …

Remaining useful lifetime prediction and extension of Si power devices have been studied
extensively. Silicon carbide (SiC) power devices have been developed and commercialized …

This article aims to provide an update of the reliability aspects of research on power
electronic components and hardware systems. It introduces the latest advances in the …

SiC MOSFETs (silicon carbide metal‐oxide semiconductor field‐effect transistors) are
replacing Si insulated gate bipolar transistors in many power conversion applications due to …

Wide band gap (WBG) power electronic devices, such as silicon carbide metal–oxide–
semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron …

In this paper, a high-temperature, high-frequency, wire-bond-based multichip phase-leg
module was designed, fabricated, and fully tested. Using paralleled Silicon Carbide (SiC) …

High temperature power electronics has become possible with the recent availability of
silicon carbide devices. This material, as other wide-bandgap semiconductors, can operate …

The superior electro-thermal properties of silicon carbide (SiC) power devices permit higher
temperature of operation and enable higher power density compared with silicon devices …

An experimental analysis of the behavior under short-circuit conditions of three different
silicon-carbide (SiC) 1200-V power devices is presented. It is found that all devices take up …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …